钕掺杂BSPT基高温压电陶瓷的性能研究  

Performance Study of Nd-Doped BSPT-Based High-Temperature Piezoelectric Ceramics

作　　者：涂浩 官尚义 史伟 陈强[1] 邢洁 TU Hao;GUAN Shangyi;SHI Wei;CHEN Qiang;XING Jie(School of Materials Science and Engineering,Sichuan University,Chengdu 610064,China)

机构地区：[1]四川大学材料科学与工程学院,四川成都610064

出　　处：《压电与声光》2025年第1期81-87,共7页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金重点项目(51932010);企业横向项目(22H1415)。

摘　　要：采用传统固相反应法制备了Nd掺杂的BiScO_(3)-PbTiO_(3)(BSPT)高温压电陶瓷。在确定BSPT准同型相界的基础上,系统研究了Nd掺杂对其结构和性能的影响。结果表明,通过Nd掺杂可调控BSPT陶瓷相结构和畴结构,进而有效提高其压电性能和温度稳定性。当BS掺杂含量(摩尔分数)为37%,Nd掺杂浓度(摩尔分数)为3.0%时,陶瓷具有最佳的压电性能,其压电常数d_(33)为620 pC/N,居里温度约为405℃,且具有良好的温度稳定性。Nd-doped BiScO_(3)-PbTiO_(3)(BSPT)high-temperature piezoelectric ceramics were prepared using a conventional solid-phase reaction method.Regarding the determination of the morphotropic phase boundary of BSPT,the effects of Nd doping on its structure and properties were systematically investigated.The results show that the phase structure and domain structure of BSPT ceramics can be regulated by Nd doping,which can effectively improve its piezoelectric properties and temperature stability.When the doped BS content is 37 mol%,and the Nd doping concentration is 3.0 mol%,it has the best piezoelectric properties,with a piezoelectric constant d_(33)of 620 pC/N,Curie temperature of approximately 405℃,and good temperature stability.

关 键 词：高温压电陶瓷 BiScO_(3)-PbTiO_(3) MPB 温度稳定性 畴结构 

分 类 号：TN384[电子电信—物理电子学]