Effect of Interdigitated Electrode Spacing on the Performance of Flexible InGaZnO Ultraviolet Photodetectors  

作　　者：LI Yuanjie ZHAO Yuqing ZHU Xuan 李远洁

机构地区：[1]Key Laboratory for Physical Electronics and Devices of the Ministry of Education,School of Electronic Science and Engineering,Xi’an Jiaotong University,Xi’an 710049,China [2]Shenzhen Academy of Xi’an Jiaotong University,Shenzhen 518057,China [3]State Key Laboratory for Manufacturing Systems Engineering,Xi’an Jiaotong University,Xi’an 710049,China

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2025年第2期307-315,共9页武汉理工大学学报(材料科学英文版)

基　　金：Funded by the Research Project of Shenzhen Science and Technology Innovation Committee(No.JCYJ20180306170801080)。

摘　　要：Planar-structured amorphous InGaZnO(a-IGZO)film-based UV photodetectors with different ITO interdigitated electrode spacings were developed on flexible PI substrates via radio frequency magnetron sputtering and non-lithographic fabrication processes.The effects of oxygen flow rate on the surface morphology,electrical transport,and chemical bonding properties of the a-IGZO films were systematically investigated to optimize the performance of the flexible detector.The average transmittance of the flexible a-IGZO photodetector is over 90%in the visible spectral range with a large photo-to-dark current ratio of 3.9×10^(3)under 360 nm UV illumination.The photocurrent of the detectors increases with decreasing the electrode spacing,which is attribute to formation of higher electrical field and drifting more electron-hole pairs to the electrode with shortening the electrode spacing.Under a UV illumination intensity of 9.1 mW/cm~2,the highest responsivity and detectivity of the photodetector with the electrode spacing of 0.4 mm reach 62.1 mA/W and2.83×10^(11)cm·Hz^(1/2)·W^(-1)at 11 V bias voltage,respectively.The flexible detector exhibits enhanced photoresponse performance with the rise and decay time of 2.02 and 0.94 s,respectively.These results can be used in a practical scheme to design and realize the a-IGZO based UV photodetectors with excellent transparency and flexibility for wearable UV monitoring applications.

关 键 词：amorphous InGaZnO thin films wearable electronics UV photodetectors magnetron sputtering transparent conducting oxides 

分 类 号：TG1[金属学及工艺—金属学]