一种多衍生结构的新型荷控忆阻模拟器的设计和实现  

Design and Realization of Novel Charge-Controlled Memristor Emulator with Multi-Derived Structure

作　　者：徐有朋 付钱华 叶笑平 XU Youpeng;FU Qianhua;YE Xiaoping(School of Electrical Engineering and Electronic Information,Xihua University,Chengdu Sichuan 610039,China)

机构地区：[1]西华大学电气与电子信息学院,四川成都610039

出　　处：《电子器件》2025年第1期1-7,共7页Chinese Journal of Electron Devices

基　　金：西华大学重点科研基金项目(Z201105)。

摘　　要：设计了一款增量型荷控忆阻模拟器,该模拟器使用现有的电子器件实现,降低了忆阻器的生产成本和技术难度。并且该忆阻模拟器(Memristor Emulator,ME)的结构是一个输入电流与输出电流相等的二端电路,可以像普通的二端元件一样直接应用到电路中,解决了部分ME工作时必须接地的限制。此外,为了提升忆阻模拟器的应用能力,在该ME的基础上额外设计了衰减型和伪并联型忆阻模拟器,三种ME可以通过简单的电路改变实现相互转换。最后对所设计的ME进行Pspice软件仿真分析和硬件测试,实验结果表明该荷控忆阻模拟器具有忆阻特性、可以物理实现,并且模拟器的v-i曲线有着多种控制方式。An incremental charge-controlled memristor emulator is proposed,which is consisted of off-the-shelf devices to lower the cost in production and hardship in technology.Moreover,this memristor emulator(ME)which can be direct applied in circuit as same as or-dinary devices is a two-terminal circuit structure with input current equal to output and solves the problem that some MEs must be grounded when working.In addition,for enhancing application ability of ME,the decremental and pseudo-parallel memristor emulator have been also proposed.By the way,three kinds of MEs can realize mutual conversion through simple circuit change.According to the results of Pspice simulation and hardware testing,this emulator which has memristor characteristics can be realized by hardware and its v-i curve can be controlled in various ways.

关 键 词：忆阻器 增量型忆阻模拟器 二端电路 二端器件 忆阻器衍生结构 

分 类 号：TN602[电子电信—电路与系统]