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作 者:Shao-Hong Liu Bing-Guo Xue Li-Min Zhou Hao Cui Man-Men Liu Li Chen Ming Wen Hai-Gang Dong Feng Liu Wei Wang Song Li Shao-Hong Xue
机构地区:[1]Key Laboratory for Anisotropy and Texture of Materials(Ministry of Education),School of Materials Science and Engineering,Northeastern University,Shenyang,110819,China [2]State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals,Yunnan Precious Metals Laboratory Co.,Ltd,Kunming,650106,China [3]Sino-Platinum Metals Semiconductor Materials(Yunnan)Co.,Ltd,Kunming,650106,China [4]不详
出 处:《Rare Metals》2024年第12期6537-6548,共12页稀有金属(英文版)
基 金:financially supported by the National Natural Science Foundation of China(Nos.51977027 and 51967008);the Scientific and Technological Project of Yunnan Precious Metals Laboratory(Nos.YPML-2023050250 and YPML-2022050206)。
摘 要:Lutetium aluminum garnet doped with cerium(LuAG:Ce)thin films have been identified as a promising material for high-power laser-driven lighting applications.In this study,spray pyrolysis we employed to fabricate LuAG:Ce films on sapphire substrates and the impact of film thickness on thermal management and light emission efficiency was investigated.Our results show that,regardless of thickness,LuAGiCe films exhibit impressive internal quantum efficiencies(IQE)exceeding 83.2%and external quantum efficiencies(EQE)surpassing 56.4%,with minimal alteration of luminescent color.Notably,thinner films facilitate more efficient heat dissipation to the underlying sapphire substrate,resulting in superior thermal management and outstanding luminous performance under high-power laser excitation.Specifically,the thinnest LuAG:Ce film(15.79μm)exhibited rapid thermal stabilization(~130℃ within 30s)and maintained stability during continuous irradiation lasting 30 min,with a corresponding decrease in luminous flux to 87.9%of its initial value within the first 60 s.This film also demonstrated relatively high and stable conversion efficiency and luminous efficiency,achieving higher saturation thresholds(15 W·mm^(-2))and luminous flux(1070 lm).In contrast,thicker films exhibited a shift in the saturation point toward lower power densities.These findings provide valuable insights for the practical implementation of LuAG:Ce films in advanced lighting technologies.
关 键 词:Laser lighting Luminescence saturation Heat dissipation Phosphor converter LuAG:Ce
分 类 号:TB383.2[一般工业技术—材料科学与工程]
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