Three types of resistive switching in ferroelectric Hf_(0.5)Zr_(0.5)O_(2)films mediated by polarization reversal and oxygen vacancy migration  

作　　者：Zheng-Xu Zhu Hao-Yu Zhao He Wang Zi-Jian Wang Jia-Chen Li Sheng-Chun Shen Yue-Wei Yin 

机构地区：[1]Hefei National Research Center for Physical Sciences at the Microscale,Department of Physics and CAS Key Laboratory of Strongly Coupled Quantum Matter Physics,University of Science and Technology of China,Hefei,230026,China

出　　处：《Rare Metals》2024年第12期6765-6770,共6页稀有金属(英文版)

基　　金：financially supported by the National Natural Science Foundation of China(Nos.52125204,52250281,U21A2066,92163210 and 52372128);the National Key Research and Development Program of China(Nos.2022YFB3807602,2019YFA0307900);the Fundamental Research Funds for the Central Universities(No.WK2030000070)。

摘　　要：Ferroelectric resistance switching(RS)devices based on doped HfO2films have drawn extensive attention due to their good complementary metal-oxide-semiconductor transistor(CMOS)compatibility compared with that of conventional perovskite ferroelectrics.However,reported RS characteristics for HfO_(2)-based RS devices contrast sharply with substantially different on/off ratios rangingfrom less than one to four orders of magnitude.

关 键 词：POLARIZATION sharply FERROELECTRIC 

分 类 号：TN3[电子电信—物理电子学]