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作 者:周利斌[1] 刘远 陈红霖 苟晨源 曹文斌 刘建科[1] ZHOU Li-bin;LIU Yuan;CHEN Hong-lin;GOU Chen-yuan;CAO Wen-bin;LIU Jian-ke(School of Physics and Information Science,Shaanxi University of Science&Technology,Xi′an 710021,China)
机构地区:[1]陕西科技大学物理与信息科学学院,陕西西安710021
出 处:《陕西科技大学学报》2025年第2期149-155,162,共8页Journal of Shaanxi University of Science & Technology
基 金:国家自然科学基金项目(51802183);陕西科技大学博士科研启动基金项目(2017BJ-23)。
摘 要:采用两步烧结法制备ZnO-Bi_(2)O_(3)系压敏陶瓷,通过单一变量法控制烧结过程中烧结温度T_(1)、T_(2)和保温时间t_(1)、t_(2)来改善压敏陶瓷性能.研究结果表明,平均晶粒尺寸d随着T_(1)的增大而增大,漏电流密度J_L随着T_(2)的增大而减小;t_(1)增大会使压敏陶瓷本征缺陷锌间隙和氧空位的数量增大,t_(2)时间过长会抑制锌间隙的生成;所有样品在低频时的损耗比高频时小很多;样品的击穿场强E_(1mA)与d的变化规律相反;非线性系数α与漏电流密度J_L的变化规律相反.当T_(1)为950℃,t_(1)达到30min,T_(2)为925℃,t_(2)达到45 min时,α为最大值67.91,J_L为最小值0.48μA/cm^(2),E_(1mA)为最大值477.32 V/mm.本研究对提升ZnO压敏陶瓷性能有重要意义.The ZnO-Bi_(2)O_(3)-based varistor ceramics were prepared using a two-step sintering process.The sintering temperature(T_(1),T_(2))and holding time(t_(1),t_(2))were controlled through a single-variable method to improve the performance of the varistor ceramics.The results of the experiment have shown that the average grain size d increases with increasing T_(1),while the leakage current density J L decreases with increasing T_(2).An increase in t_(1) results in a higher number of intrinsic defects such as zinc interstitials and oxygen vacancies in the varistor ceramics,whereas an excessive t_(2) time suppresses the formation of zinc interstitials.All samples exhibited lower loss at low frequencies compared to high frequencies.The breakdown electric field strength E 1mA varies inversely with d,and the nonlinear coefficientαvaries inversely with J L.When T_(1) is 950℃,t_(1) reaches 30 minutes,T_(2) is 925℃,and t_(2) reaches 45 minutes,the nonlinear coefficientαachieves a maximum value of 67.91,the leakage current density J L reaches a minimum value of 0.48μA/cm^(2),and the breakdown electric field strength E 1mA reaches a maximum value of 477.32 V/mm.This study is significant importance for enhancing the performance of ZnO varistor ceramics.
关 键 词:ZNO ZnO-Bi_(2)O_(3)系压敏陶瓷 两步烧结
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