High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors  

作　　者：Jiankun Xiao Xiong Xiong Xinhang Shi Shiyuan Liu Shenwu Zhu Yue Zhang Ru Huang Yanqing Wu 

机构地区：[1]School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits,Peking University,Beijing 100871,China [2]Wuhan National High Magnetic Field Center and School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan 430074,China [3]Academy for Advanced Interdisciplinary Science and Technology,Beijing Advanced Innovation Center for Materials Genome Engineering,University of Science and Technology Beijing,Beijing 100083,China

出　　处：《Research》2024年第4期119-126,共8页研究(英文)

基　　金：supported by the Natural Science Foundation of China(grant nos.92364203,92464303,62090034,62425402,and 62104012);the National Key Research and Development Program of China(grant nos.2022YFB4400100 and 2021YFA1202903);Beijing Natural Science Foundation(grant no.4242057);Technology Innovation Program of Hunan Province(grant no.2021RC5008).

摘　　要：Edge contact is essential for achieving the ultimate device pitch scaling of stacked nanosheet transistors with monolayer 2-dimensional(2D)channels.However,due to large edge-contact resistance between 2D channels and contact metal,there is currently a lack of high-performance edge-contact device technology for 2D material channels.Here,we report high-performance edge-contact monolayer molybdenum disulfide(MoS_(2))field-effect transistors(FETs)utilizing well-controlled plasma etching techniques.

关 键 词：SULFIDE utilizing MOLYBDENUM 

分 类 号：TN3[电子电信—物理电子学]