Van der Waals interface between high-κdielectrics and 2D semiconductors  

作　　者：Jingyu He Yang Zuo Tong Yang Tao Zhu Ming Yang 

机构地区：[1]Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong,China [2]School of Electronic and Information Engineering,Tiangong University,Tianjin 300387,China [3]Research Centre on Data Sciences&Artificial Intelligence,The Hong Kong Polytechnic University,Hong Kong,China [4]Research Centre for Nanoscience and Nanotechnology,The Hong Kong Polytechnic University,Hong Kong,China

出　　处：《Frontiers of physics》2025年第1期65-81,共17页物理学前沿(英文版)

基　　金：support from the National Key R&D Program of the Ministry of Science and Technology of China(Project No.2022YFA1203804);the Hong Kong Polytechnic University(Project Nos.P0034827,P0042711,P0039734,P0039679,URIS2023-050,and URIS2023-052);PolyU RCNN(Project No.P0048122);Research Grants Council,Hong Kong(Project Nos.P0046939 and P0045061);supported by the National Natural Science Foundation of China(Grant No.12204346).

摘　　要：Atomically thin two-dimensional(2D)semiconductors are attractive channel materials for next-generation field-effect transistors(FETs).The highperformance 2D electronics requires high-quality integration of highdielectrics,which however remains a significant challenge.In this minireview,we provide a brief introduction on recent progress in the van der Waals(vdW)integration of high-dielectrics onto 2D semiconductors.We first highlight the importance of high-dielectric integration for 2D FETs.Next,we summarize the recent breakthroughs in the various vdW integrations of high-dielectrics with 2D semiconductors,along with their interfaces’properties.Additionally,we examine the quasi-vdW integration of conventional high-dielectrics onto 2D semiconductors.Finally,we discuss the challenges and potential future research directions in this field.

关 键 词：two-dimensional semiconductor high-dielectrics van der Waals interface 

分 类 号：TN3[电子电信—物理电子学]