The influence ofⅤ/Ⅲratio on electron mobility of the InAs_(x)Sb_(1-x)layers grown on GaAs substrate by molecular beam epitaxy  

Ⅴ/Ⅲ比对分子束外延生长的GaAs基InAs_(x)Sb_(1-x)电子迁移率的影响

作　　者：ZHANG Jing YANG Zhi ZHENG Li-Ming ZHU Xiao-Juan WANG Ping YANG Lin 张静;阳智;郑黎明;朱小娟;王萍;杨琳(陕西科技大学电子信息与人工智能学院,陕西西安710016;西安交通工程学院机电工程学院,陕西西安710300;河北科技大学信息科学与工程学院,河北石家庄050018)

机构地区：[1]School of Electronic Information and Artificial Intelligence,Shaanxi University of Science and Technology,Xi’an 710016,China [2]School of Mechanical and Electrical Engineering,Xi’an Traffic Engineering Institute,Xi’an 710300,China [3]School of Information Science and Engineering,Hebei University of Science and Technology,Shijiazhuang 050018,China

出　　处：《红外与毫米波学报》2025年第1期25-32,共8页Journal of Infrared and Millimeter Waves

基　　金：Supported by the Natural Science Basic Research Program of Shaanxi Province(2023-JC-QN-0758);Shaanxi University of Science and Technology Research Launch Project(2020BJ-26);Doctoral Research Initializing Fund of Hebei University of Science and Technology,China(1181476).

摘　　要：This paper discusses the influence of Sb/In ratio on the transport properties and crystal quality of the 200 nm InAs_(x)Sb_(1-x)thin film.The Sb content of InAs_(x)Sb_(1-x)thin film in all samples was verified by HRXRD of the symmetrical 004 reflections and asymmetrical 115 reflections.The calculation results show that the Sb component was 0.6 in the InAs_(x)Sb_(1-x)thin film grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3,which has the highest electron mobility(28560 cm^(2)/V·s)at 300 K.At the same time,the influence ofⅤ/Ⅲratio on the transport properties and crystal quality of Al_(0.2)In_(0.8)Sb/InAs_(x)Sb_(1-x)quantum well heterostructures also has been investigated.As a result,the Al_(0.2)In_(0.8)Sb/InAs_(0.4)Sb_(0.6)quantum well heterostructure with a channel thickness of 30 nm grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3 has a maximum electron mobility of 28300 cm^(2)/V·s and a minimum RMS roughness of 0.68 nm.Through optimizing the growth conditions,our samples have higher electron mobility and smoother surface morphology.研究了Sb/In比对200 nm InAs_(x)Sb_(1-x)薄膜传输特性和晶体质量的影响。通过对称(004)扫描和非对称(115)扫描的HRXRD计算了所有样品中InAs_(x)Sb_(1-x)薄膜的Sb含量。计算结果表明,在Sb/In比为6和As/In比为3的条件下生长的InAs_(x)Sb_(1-x)薄膜中,Sb组分为0.6。InAs_(x)Sb_(1-x)薄膜在室温下测得的最高电子迁移率为28560 cm^(2)/V·s。同时,本文还研究了Sb/In比和As/In比对Al_(0.2)In_(0.8)Sb/InAs_(x)Sb_(1-x)量子阱异质结的输运性质和晶体质量的影响。结果显示,在Sb/In比为6和As/In比为3的条件下生长的沟道厚度为30 nm的Al_(0.2)In_(0.8)Sb/InAs_(0.4)Sb_(0.6)量子阱异质结的最高电子迁移率为28300 cm^(2)/V·s,最小表面粗糙度为0.68 nm。通过优化生长条件,我们的样品具有更好的晶体质量和更光滑的表面形貌。

关 键 词：molecular beam epitaxy InAs_(x)Sb_(1-x) Ⅴ/Ⅲratio high electron mobility 

分 类 号：TN304.2[电子电信—物理电子学] TN305