Semi-floating gate ferroelectric phototransistor optoelectronic integrated devices  

半浮栅铁电光电晶体管光子集成器件

作　　者：SHANG Jia-Le CHEN Yan YAN Hao-Ran DI Yun-Xiang HUANG Xin-Ning LIN Tie MENG Xiang-Jian WANG Xu-Dong CHU Jun-Hao WANG Jian-Lu 尚嘉乐;陈艳;颜浩然;狄云翔;黄新宁;林铁;孟祥建;王旭东;褚君浩;王建禄(中国科学院上海技术物理研究所,上海200083;复旦大学光电研究院,上海200433;复旦大学芯片与系统前沿技术研究院,上海200433;中国科学院大学,北京100049)

机构地区：[1]State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China [2]Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception,Institute of Optoelectronics,Fudan University,Shanghai 200433,China [3]Frontier Institute of Chip and System,Fudan University,Shanghai 200433,China [4]University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《红外与毫米波学报》2025年第1期52-58,共7页Journal of Infrared and Millimeter Waves

基　　金：Supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB0580000);Natural Science Foundation of China(62222413,62025405,62105100,62075228 and 62334001);Natural Science Foundation of Shanghai(23ZR1473400);Hundred Talents Program of the Chinese Academy of Sciences。

摘　　要：In the realm of optoelectronics,photodetectors play pivotal roles,with applications spanning from high-speed data communication to precise environmental sensing.Despite the advancements,conventional photodetectors grapple with challenges with response speed and dark current.In this study,we present a photodetector based on a lateral MoTe_(2)p-n junction,defined by a semi-floating ferroelectric gate.The strong ferroelectric fields and the depletion region of the p-n junction in the device are notably compact,which diminish the carrier transit time,thereby enhancing the speed of the photoelectric response.The non-volatile MoTe_(2)homojunction,under the influence of external gate voltage pulses,can alter the orientation of the intrinsic electric field within the junction.As a photovoltaic detector,it achieves an ultra-low dark current of 20 pA,and a fast photo response of 2μs.The spectral response is extended to the shortwave infrared range at 1550 nm.Furthermore,a logic computing system with light/no light as binary input is designed to convert the current signal to the voltage output.This research not only underscores the versatility of 2D materials in the realm of sophisticated photodetector design but also heralds new avenues for their application in energy-efficient,high-performance optoelectronic devices.在光电子领域中,光电探测器扮演了关键的角色,应用范围从高速数据通信到精确的环境感测。尽管取得进步,传统的光电探测器在响应速度和暗电流方面仍面临挑战。在本研究中,我们提出了一种基于面内MoTe_(2)p-n结的光电探测器,该探测器由半浮铁电栅控制。强铁电场使得器件中的p-n结耗尽区较短,有助于减少载流子传输时间,从而提高光电响应速度。这种非易失性MoTe_(2)同质结在外部栅压的作用下,能够改变内建电场的方向。作为光伏探测器,它实现了20 pA极低的暗电流和2μs快速的光响应时间。光谱响应扩展到1550 nm的短波红外范围。此外,还展示设计了一个有光/无光作为二进制输入,将电流信号转化为电压输出的逻辑运算系统。这项研究不仅展示了二维材料在复杂光电探测器设计领域的多功能性,还为其在能效高、性能优的光电设备中的应用开辟了新途径。

关 键 词：PHOTODETECTORS p-n junction ferroelectric field high-speed photodetector 

分 类 号：O43[机械工程—光学工程]