光伏单晶硅片冲洗过程中应力分布的研究  

Study on Stress Distribution of Photovoltaic Monocrystalline Silicon Sheet During Washing

作　　者：李涛[1] 吕国强[2] 李遇贤[1] 钱益超 张杰[1] LI Tao;LYU Guoqiang;LI Yuxian;QIAN Yichao;ZHANG Jie(Faculty of Mechanical and Electrical Engineering,Kunming University of Science and Technology,Kunming 650500,China;School of Metallurgy and Energy Engineering,Kunming University of Science and Technology,Kunming 650093,China)

机构地区：[1]昆明理工大学机电工程学院,昆明650500 [2]昆明理工大学冶金与能源工程学院,昆明650093

出　　处：《材料导报》2025年第7期39-45,共7页Materials Reports

基　　金：国家自然科学基金(22268027)。

摘　　要：在光伏单晶硅片冲洗过程中,产生的最大应力可能导致硅片损伤,硅片上应力的分布及硅片上最大应力位置的确定对于降低硅片的损伤程度有重要意义。首先基于矩形板的Levy解模型,计算冲洗过程中不同尺寸硅片上的挠度和应力值;然后,运用ABAQUS有限元软件对硅片冲洗过程中产生的应力进行仿真。结果表明,运用矩形板Levy解模型计算时,特定比值下,当硅片的长宽比b/a=2、1、0.5时,最大应力值出现在自由边上(y=b)或固支边上(y=0)。当硅片宽度a固定、长度b逐渐增加时,在固支边上长宽比b/a=0.5时应力值最大,在自由边上长宽比b/a=0.9时应力值最大;当硅片的长宽比b/a=0.1~1.5时,硅片的最大应力分布在固支边上;当硅片的长宽比b/a=1.5~2时,硅片的最大应力分布在自由边上。通过最大挠度确定最大应力位置,虽然能减少大量计算,但是不够全面和准确。运用ABAQUS有限元分析得出的结果与矩形板Levy解模型计算得出的应力分布规律一致,但是应力值存在一定的误差。将矩形板Levy解模型得出的结果与莫尔理论结合,推导出硅片上冲洗压力与硅片厚度的关系公式。利用该公式,当硅片厚度确定时,能计算出硅片上承受的最大冲洗压力;当冲洗压力确定时,能得出硅片冲洗时不被破坏的最小厚度。In the process of washing photovoltaic monocrystalline silicon wafer,the maximum stress may cause damage to the silicon wafer.The determination of the distribution of the stress on the silicon wafer and the maximum stress position on the silicon wafer are of great significance to reduce the damage of the silicon wafer.In this work,based on the Levy solution model of the short-shaped plate,the deflection and stress values of the silicon wafers of different sizes are calculated.Then,ABAQUS finite element software is used to simulate the stress generated in the process of silicon wafer washing.The results show that the maximum stress value appears on the free edge(y=b)or the fixed edge(y=0)when the wafer's aspect ratio b/a=2,1 and 0.5 are calculated by using the Levy solution model of the short-shaped plate.When the wafer width a is fixed and the length b is gradually increased,the stress value is maximum when the aspect ratio b/a=0.5 on the fixed side,and the stress value is maximum when the aspect ratio b/a=0.9 on the free side.When the aspect ratio of the silicon wafer b/a=0.1—1.5,the maximum stress of the silicon wafer is distributed on the solid support edge,and when the aspect ratio of the silicon wafer b/a=1.5—2,the maximum stress of the silicon wafer is distributed on the free edge.The determination of the maximum stress position by the maximum deflection can reduce a lot of calculation,but it is not comprehensive and accurate.The results obtained by ABQUS finite element analysis are consistent with the stress distribution calculated by Levy solution model of rectangular plate,but there are some errors in the stress value.By combining the results of Levy solution model of rectangular plate with Mohr theory,the relation formula between the washing pressure and the thickness of silicon wafer is derived.When the thickness of the silicon wafer is determined,the maximum washing pressure that can be borne on the silicon wafer can be calculated;conversely,when the washing pressure is determined,the minimum thic

关 键 词：光伏单晶硅 矩形板Levy解 单晶硅片冲洗 应力 

分 类 号：TH145[一般工业技术—材料科学与工程]