Manufacture and applications of GaN-based piezotronic and piezo-phototronic devices  

作　　者：Jianan Niu Jiangwen Wang Wei Sha Yong Long Bei Ma Weiguo Hu 

机构地区：[1]CAS Center for Excellence in Nanoscience,Beijing Key Laboratory of Micro-nano Energy and Sensor,Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,Beijing 101400,People’s Republic of China [2]School of Nanoscience and Technology,University of Chinese Academy of Sciences,Beijing 101400,People’s Republic of China [3]Graduate School of Electrical and Electronic Engineering,Chiba University,Chiba 263-8522,Japan [4]Huairou Laboratory,Beijing 101400,People’s Republic of China

出　　处：《International Journal of Extreme Manufacturing》2025年第1期130-149,共20页极端制造(英文)

基　　金：the support from the National Natural Science Foundation of China(Grant Nos.52173298,52192611 and 61904012);the National Key R&D Project from Minister of Science and Technology(2021YFA1201603);Beijing Natural Science Foundation(Z230024);the Fundamental Research Funds for the Central Universities。

摘　　要：Driven by the urgent demands for information technology,energy,and intelligent industry,third-generation semiconductor GaN has emerged as a pivotal component in electronic and optoelectronic devices.Fundamentally,piezoelectric polarization is the most essential feature of GaN materials.Incorporating piezotronics and piezo-phototronics,GaN materials synergize mechanical signals with electrical and optical signals,thereby achieving multi-field coupling that enhances device performance.Piezotronics regulates the carrier transport process in micro-nano devices,which has been proven to significantly improve the performance of devices(such as high electron mobility transistors and microLEDs)and brings many novel applications.This review examines GaN material properties and the theoretical foundations of piezotronics and phototronics.Furthermore,it delves into the fabrication and integration processes of GaN devices to achieve state-of-the-art performance.Additionally,this review analyzes the impact of introducing three-dimensional stress and regulatory forces on the electrical and optical output performance of devices.Moreover,it discusses the burgeoning applications of GaN devices in neural sensing,optoelectronic output,and energy harvesting.The potential of piezotroniccontrolled GaN devices provides valuable insights for future research and the development of multi-functional,diversified electronic devices.

关 键 词：piezotronics piezo-phototronics GaN-based device MANUFACTURE 

分 类 号：TN3[电子电信—物理电子学]