Materials,processes,devices and applications of magnetoresistive random access memory  

作　　者：Meiyin Yang Yan Cui Jingsheng Chen Jun Luo 

机构地区：[1]Key Laboratory of Fabrication Technologies for Integrated Circuits,Chinese Academy of Sciences,Beijing 100029,People’s Republic of China [2]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,People’s Republic of China [3]School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,People’s Republic of China [4]Department of Materials Science and Engineering,National University of Singapore,Singapore 117575,Singapore [5]Suzhou Research Institute,National University of Singapore,Suzhou,Jiangsu 215000,People’s Republic of China

出　　处：《International Journal of Extreme Manufacturing》2025年第1期277-306,共30页极端制造(英文)

基　　金：supported in part by the Youth Innovation Promotion Association of Chinese Academy of Sciences(CAS)under Grant 2020118;Beijing Nova Program under Grant 20230484358;Beijing Superstring Academy of Memory Technology:under Grant No.E2DF06X003。

摘　　要：Magnetoresistive random access memory(MRAM)is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution,particularly in cache functions within circuits.Although MRAM has achieved mass production,its manufacturing process still remains challenging,resulting in only a few semiconductor companies dominating its production.In this review,we delve into the materials,processes,and devices used in MRAM,focusing on both the widely adopted spin transfer torque MRAM and the next-generation spin-orbit torque MRAM.We provide an overview of their operational mechanisms and manufacturing technologies.Furthermore,we outline the major hurdles faced in MRAM manufacturing and propose potential solutions in detail.Then,the applications of MRAM in artificial intelligent hardware are introduced.Finally,we present an outlook on the future development and applications of MRAM.

关 键 词：spin transfer torque-magnetoresistive random access memory(STT-MRAM) spin-orbit torque(SOT)MRAM materials for MRAM field-free writing of SOT-MRAM MRAM process artificial intelligence 

分 类 号：TP3[自动化与计算机技术—计算机科学与技术]