Precise modulation of the debonding behaviours of ultra-thin wafers by laser-induced hot stamping effect and thermoelastic stress wave for advanced packaging of chips  

作　　者：Jieyuan Zhang Yanlei Hu Fangcheng Wang Qiang Liu Fangfang Niu Jinhui Li Mingqi Huang Guoping Zhang Rong Sun 

机构地区：[1]Shenzhen Institute of Advanced Electronic Materials,Shenzhen Institutes of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518055,People’s Republic of China [2]Department of Nano Science and Technology Institute,University of Science and Technology of China,Suzhou 215123,People’s Republic of China [3]Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,People’s Republic of China [4]Shenzhen Samcien Semiconductor Materials Co.,Ltd,Shenzhen 518103,People’s Republic of China

出　　处：《International Journal of Extreme Manufacturing》2025年第1期395-407,共13页极端制造(英文)

基　　金：the National Natural Science Foundation of China(62174170);the Natural Science Foundation of Guangdong Province(2024A1515010123);the Shenzhen Science and Technology Program(20220807020526001);the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB0670000);the Shenzhen Science and Technology Program(KJZD20230923114708018,KJZD20230923114710022);the Talent Support Project of Guangdong(2021TX06C101);the Shenzhen Basic Research(JCYJ20210324115406019).

摘　　要：Laser debonding technology has been widely used in advanced chip packaging,such as fan-out integration,2.5D/3D ICs,and MEMS devices.Typically,laser debonding of bonded pairs(R/R separation)is typically achieved by completely removing the material from the ablation region within the release material layer at high energy densities.However,this R/R separation method often results in a significant amount of release material and carbonized debris remaining on the surface of the device wafer,severely reducing product yields and cleaning efficiency for ultra-thin device wafers.Here,we proposed an interfacial separation strategy based on laser-induced hot stamping effect and thermoelastic stress wave,which enables stress-free separation of wafer bonding pairs at the interface of the release layer and the adhesive layer(R/A separation).By comprehensively analyzing the micro-morphology and material composition of the release material,we elucidated the laser debonding behavior of bonded pairs under different separation modes.Additionally,we calculated the ablation threshold of the release material in the case of wafer bonding and established the processing window for different separation methods.This work offers a fresh perspective on the development and application of laser debonding technology.The proposed R/A interface separation method is versatile,controllable,and highly reliable,and does not leave release materials and carbonized debris on device wafers,demonstrating strong industrial adaptability,which greatly facilitates the application and development of advanced packaging for ultra-thin chips.

关 键 词：laser debonding behaviours laser-induced hot stamping effect thermoelastic stress wave advanced packaging 

分 类 号：TN3[电子电信—物理电子学]