Towards atomic-scale smooth surface manufacturing of β-Ga_(2)O_(3)via highly efficient atmospheric plasma etching  

作　　者：Yongjie Zhang Yuxi Xiao Jianwen Liang Chun Zhang Hui Deng 

机构地区：[1]Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,Guangdong 518055,People’s Republic of China [2]Department of Physics,National University of Singapore,2 Science Drive 3,Singapore 117551,Singapore [3]Shenzhen Engineering Research Center for Semiconductor-specific Equipment,Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,Guangdong 518055,People’s Republic of China

出　　处：《International Journal of Extreme Manufacturing》2025年第1期482-502,共21页极端制造(英文)

基　　金：supported by the National Natural Science Foundation of China(52375437,52035009);the Natural Science Foundation of Guangdong Province(2024B1515020027);the Shenzhen Science and Technology Program(Grant No.KQTD20170810110250357)for the financial support;the assistance of SUSTech Core Research Facilities;supported by Shenzhen Engineering Research Center for Semiconductorspecific Equipment。

摘　　要：The highly efficient manufacturing of atomic-scale smooth β-Ga_(2)O_(3)surface is fairly challenging because β-Ga_(2)O_(3)is a typical difficult-to-machine material.In this study,a novel plasma dry etching method named plasma-based atom-selective etching(PASE)is proposed to achieve the highly efficient,atomic-scale,and damage-free polishing of β-Ga_(2)O_(3).The plasma is excited through the inductive coupling principle and carbon tetrafluoride is utilized as the main reaction gas to etch β-Ga_(2)O_(3).The core of PASE polishing of β-Ga_(2)O_(3)is the remarkable lateral etching effect,which is ensured by both the intrinsic property of the surface and the extrinsic temperature condition.As revealed by density functional theory-based calculations,the intrinsic difference in the etching energy barrier of atoms at the step edge(2.36 eV)and in the terrace plane(4.37 eV)determines their difference in the etching rate,and their etching rate difference can be greatly enlarged by increasing the extrinsic temperature.The polishing of β-Ga_(2)O_(3)based on the lateral etching effect is further verified in the etching experiments.The Sa roughness of β-Ga_(2)O_(3)(001)substrate is reduced from 14.8 nm to 0.057 nm within 120 s,and the corresponding material removal rate reaches up to 20.96μm·min^(−1).The polished β-Ga_(2)O_(3)displays significantly improved crystalline quality and photoluminescence intensity,and the polishing effect of PASE is independent of the crystal face of β-Ga_(2)O_(3).In addition,the competition between chemical etching and physical reconstruction,which is determined by temperature and greatly affects the surface state of β-Ga_(2)O_(3),is deeply studied for the first time.These findings not only demonstrate the high-efficiency and high-quality polishing of β-Ga_(2)O_(3)via atmospheric plasma etching but also hold significant implications for guiding future plasma-based surface manufacturing of β-Ga_(2)O_(3).

关 键 词：atmospheric plasma plasma etching atomic-scale polishing gallium oxide next-generation semiconductor 

分 类 号：TN3[电子电信—物理电子学]