基于二维范德瓦尔斯铁磁/反铁磁Fe_(3)GeTe_(2)/Fe_(1/3)NbS_(2)异质结交换偏置效应的实验研究  

Experimental Study on Exchange Bias Effect based on Two-dimensional Van der Waals Ferromagnetic/antiferromagnetic Fe_(3)GeTe_(2)/Fe_(1/3)NbS_(2)Heterostructures

作　　者：罗和程 李勇德 刘萍 LUO Hecheng;LI Yongde;LIU Ping(College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology),Nanjing University of Posts and Telecommunications,Nanjing 210023,China;School of Science,Nanjing University of Posts and Telecommunications,Nanjing 210023,China)

机构地区：[1]南京邮电大学电子与光学工程学院柔性电子(未来技术)学院,江苏南京210023 [2]南京邮电大学理学院,江苏南京210023

出　　处：《大学物理实验》2025年第1期25-29,共5页Physical Experiment of College

基　　金：国家自然科学基金青年科学基金项目(12104235)。

摘　　要：交换偏置效应在磁性随机存储器和磁性隧道结等自旋电子学器件中具有广阔的应用前景。本文构建了二维范德瓦尔斯铁磁/反铁磁Fe_(3)GeTe_(2)/Fe_(1/3)NbS_(2)异质结器件,通过测试反常霍尔效应系统地研究了该器件的交换偏置效应。结果表明,所制备的异质结器件界面存在交换偏置效应,交换偏置场(H_(ex))随着温度的升高而逐渐减小,阻塞温度约为40 K。此外,通过改变Fe_(3)GeTe_(2)的厚度,实现了对Fe_(3)GeTe_(2)/Fe_(1/3)NbS_(2)异质结构中交换偏置场的调控,最大|H_(ex)|达到了400 Oe,交换偏置场随着铁磁层厚度的增加呈先增大后减小的趋势。The exchange bias effect has broad application prospects in spintronic devices such as magnetic random access memory and magnetic tunnel junctions.In this paper,a two-dimensional van der Waals ferromagnetic/antiferromagnetic Fe_(3)GeTe_(2)/Fe_(1/3)NbS_(2)heterostructure device was constructed,and the exchange bias effect of the device was systematically investigated through the anomalous Hall effect measurements.The results show that there is an exchange bias effect at the interface of the heterostructures device prepared,and the exchange bias field(H ex)gradually decreases with increasing temperature.And the blocking temperature is about 40 K.In addition,by changing the thickness of Fe_(3)GeTe_(2),the exchange bias field in the Fe_(3)GeTe_(2)/Fe_(1/3)NbS_(2)heterostructure was modulated,with a maximum|H_(ex)|of 400 Oe.The exchange bias field showed a trend of first increasing and then decreasing with the increase in the thickness of the ferromagnetic layer.

关 键 词：交换偏置 铁磁/反铁磁异质结 二维磁性 

分 类 号：G642[文化科学—高等教育学]