基于QST衬底的厚GaN外延材料生长研究  

Research on Growth of Thick GaN Epitaxial Materials Based on QST Substrate

作　　者：韩颖[1] 高爽 房玉龙[1] 王波[1] 高楠 张志荣[1] Han Ying;Gao Shuang;Fang Yulong;Wang Bo;Gao Nan;Zhang Zhirong(The 13th Research Institute,CETC,Shijiazhuang 050051,China;Third-Generation Semiconductor Technology Co.,Ltd.,CETC,Beijing 100041,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]中电科第三代半导体科技有限公司,北京100041

出　　处：《微纳电子技术》2025年第4期108-113,共6页Micronanoelectronic Technology

基　　金：河北省省级科技计划资助(22280601Z)。

摘　　要：在QST复合衬底上生长出厚度超过12μm的GaN外延层。测试结果表明外延片表面平整、无裂纹;原子力显微镜(AFM)分析表明样品表面为良好的台阶流形貌,样品表面中心的均方根表面粗糙度为0.224 nm;外延片的弯曲度仅为6.086μm,这对于维持器件应用中的结构完整性至关重要;GaN的(002)和(102)晶面半高全宽(FWHM)分别为131和272 arcsec,表明材料具有较高程度的结晶取向和晶格有序性;外延片的方块电阻为276.5Ω/□,二维电子气(2DEG)密度为1.05×10^(13)cm^(-2),载流子迁移率为2150 cm^(2)/(V·s),表明材料具有良好的电学性能。本研究在QST衬底上成功制备了低弯曲度、厚GaN外延片,为在更大直径QST衬底上生长更厚的GaN外延层提供了参考,对未来高压GaN在电力电子领域的应用具有指导意义。GaN epitaxial layer with a thickness over 12μm was grown on QST composite substrate.The measurement results indicate that the surface of the epitaxial wafer is smooth and free of cracks.Atomic force microscopy(AFM)analysis shows that the surface of the sample has good step-flow morphology,and the root-mean-square surface roughness of the sample surface center is 0.224 nm.The bow of the epitaxial wafer is only 6.086μm,which is critical for maintaining structural integrity in device applications.The full width at half maximum(FWHM)of the GaN(002)and(102)crystal planes are 131 arcsec and 272 arcsec,respectively,indicating that the materials has a high degree of crystallographic orientation and lattice order.The square resistance of the epitaxial wafer is 276.5Ω/□,the two-dimensional electron gas(2DEG)density is 1.05×10^(13)cm^(-2)and the carrier mobility is 2150 cm^(2)/(V·s),indicating that the material has excellent electrical properties.In this study,low-bow thick GaN epitaxial wafer was successfully prepared on QST substrate,which provides a reference for the growth of thicker GaN epitaxial layer on larger diameter QST substrate,and has guiding significance for the future application of high-voltage GaN in the field of power electronics.

关 键 词：QST衬底 热膨胀系数(CTE) 厚外延 二维电子气(2DEG) 异质外延 

分 类 号：TN304.054[电子电信—物理电子学]