Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect  

作　　者：Zhiyuan Liu Haicheng Cao Xiao Tang Tingang Liu Yi Lu Zixian Jiang Na Xiao Xiaohang Li 

机构地区：[1]Advanced Semiconductor Laboratory,Electrical and Computer Engineering Program,CEMSE Division,King Abdullah University of Science and Technology(KAUST),Thuwal 23955-6900,Kingdom of Saudi Arabia

出　　处：《Light(Science & Applications)》2025年第2期307-332,共26页光(科学与应用)(英文版)

基　　金：The authors would like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01,Transition Award in Semiconductors,Award No.FCC/1/5939,OpportunityFundURF/1/5557-01-01.

摘　　要：The size of InGaN micro-LEDs is continuously decreasing to meet the demands of various emerging applications,especially in tiny micro-displays such as ARVR.However,the conventional pixel definition based on plasma etching significantly damages the mesa sidewalls,leading to a severe reduction in efficiency as the micro-LED size decreases.This seriously impedes the development and application of micro-LEDs.In this work,we comprehensively explain the origin of micro-LED sidewall effects and corresponding physical models.Subsequently,we systematically review recent progress in micro-LED fabrication aiming at suppressing sidewall effects.Furthermore,we discuss advancements in micro-LED fabrication with"damage-free"techniques,which hold the potential to fundamentally address the issue of plasma damage in the micro-LED process.We believe this review will deepen the understanding of micro-LED sidewall effects and provide a better insight into the latest associated fabrication technologies for high-efficientInGaNmicro-LEDs.

关 键 词：plasma etching mesa sidewallsleading sidewall effect pixel definition advanced technologies reduction efficiency 

分 类 号：TN3[电子电信—物理电子学]