PDA@BCZT/P(VDF-TrFE)压电薄膜的制备及改性  

Preparation and property modification of PDA@BCZT/P(VDF-TrFE)piezoelectric films

作　　者：李涓 许超群 LI Juan;XU Chaoqun(College of Materials Science and Engineering,Zhejiang University of Technology,Hangzhou 310014,China)

机构地区：[1]浙江工业大学材料科学与工程学院,浙江杭州310014

出　　处：《浙江工业大学学报》2025年第2期219-228,共10页Journal of Zhejiang University of Technology

基　　金：国家自然科学基金资助项目(U20A20172)。

摘　　要：偏氟乙烯和三氟乙烯的共聚物(P(VDF-TrFE))由于具有低密度、柔性、低阻抗以及生物相容性好等优点,在生物医学、电子器件、能源存储等领域具有广泛应用前景。然而相较于陶瓷压电材料,P(VDF-TrFE)薄膜的极化值小,压电常数也较低。为提高P(VDF-TrFE)的压电性能,需要采用有效途径来提高压电相β相的质量分数以及薄膜结晶度。采用高温固相法在1350℃下烧结获得处于MPB结构的0.4 Ba(Zr_(0.2)Ti_(0.8))O 30.6(Ba_(0.7)Ca_(0.3))TiO_(3)(BCZT)陶瓷颗粒,用盐酸多巴胺(PDA)对BCZT进行表面处理后以其为填料与P(VDF-TrFE)共混形成复合薄膜。实验结果表明,经表面处理的PDA@BCZT与P(VDF-TrFE)基质的界面相容性得到了明显改善,复合薄膜的结晶度和压电性能大幅提高。当加入质量分数(湿重)为5%的PDA@BCZT时,复合薄膜的结晶度由未添加时的47.60%提高到59.49%,压电系数(d_(33))由10.2 pC/N提高到19.9 pC/N。将添加质量分数(湿重)为5%的PDA@BCZT复合薄膜制成压电器件,用约5 N的力敲击薄膜器件可以产生20 V左右的电压并成功点亮发光二极管。Poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE))has broad application prospects in fields such as biomedical,electronic devices,and energy storage due to its advantages of low density,flexibility,low impedance,and good biocompatibility.However,compared with ceramic piezoelectric materials,P(VDF-TrFE)thin films have lower polarization values and piezoelectric constants.To improve the piezoelectric properties of P(VDF-TrFE),effective methods are required to increase the content of the piezoelectricβphase and enhance film crystallinity.In this work,0.4 Ba(Zr_(0.2) Ti_(0.8))O 30.6(Ba_(0.7)Ca_(0.3))TiO_(3)(BCZT)ceramic particles with an material performance branch(MPB)structure were obtained by high-temperature solid-phase sintering at 1350℃.BCZT was surface-treated with dopamine hydrochloride(PDA)and then mixed with P(VDF-TrFE)to form a composite film.The experimental results showed that the interface compatibility between PDA@BCZT and the P(VDF-TrFE)matrix was significantly improved after surface treatment.The film crystallinity and piezoelectric properties of the composite film were greatly improved.When the mass fraction of PDA@BCZT added was 5%(wet weight),the crystallinity of the composite film increased from 47.60%to 59.49%,and the piezoelectric coefficient(d_(33))increased from 10.2 pC/N to 19.9 pC/N.A piezoelectric device made using a 5%addition of PDA@BCZT composite film produced 20 V of voltage when striking with apporximately 5 N of force,successfully lighting up a LED.

关 键 词：PDA@BCZT/P(VDF-TrFE) 表面处理 结晶度 压电常数 

分 类 号：TB381[一般工业技术—材料科学与工程]