基于侧向损耗结构的高阶侧向耦合光栅DFB半导体激光器  

High order lateral coupled grating DFB semiconductor laser based on lateral loss structure

作　　者：王泽龙 范杰 王海珠 邹永刚 石琳琳 张崇 WANG Zelong;FAN Jie;WANG Haizhu;ZOU Yonggang;SHI Linlin;ZHANG Chong(National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China;The First Military Representative Office of the Army Equipment Department Stationed in Changchun Area,Changchun 130000,China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022 [2]陆军装备部驻长春地区第一军事代表室,吉林长春130000

出　　处：《红外与激光工程》2025年第3期184-191,共8页Infrared and Laser Engineering

基　　金：吉林省科技发展规划项目(20240302022GX)。

摘　　要：窄线宽、基横模半导体激光器件的应用范围非常广泛。为获得窄线宽、基横模输出的半导体激光器,在边发射半导体激光器脊波导两侧分区制作高阶侧向耦合光栅和侧向损耗结构,用以压窄线宽和抑制高阶横模。该器件在50μm宽脊波导前端的两侧刻蚀损耗结构区,长度为150μm,横向刻蚀深度为10μm。侧向耦合光栅的长度为700μm,周期为6.3μm,占空比为0.4。实验结果表明,在注入电流为0.6 A时,该激光器件的输出光斑仍能保持“单瓣”状态,发散角为5.92°,光谱线宽为46 pm,波长为1 058.7nm,相比于宽脊波导激光器(WR-LD)分别降低了16.5%和59.6%。该激光器获得了259.19 mW的输出功率和0.52 W/A的斜率效率,相比于WR-LD分别提升了25.6%和33.3%。Objective Narrow linewidth,fundamental transverse mode semiconductor laser devices are ideal optical sources for laser communication applications.To achieve a narrow linewidth and fundamental transverse mode output from semiconductor lasers,this study introduces lateral coupled gratings and lateral loss structures on both sides of the ridge waveguide of a broad-area semiconductor laser.These modifications aim to narrow the linewidth and suppress higher-order transverse modes.The device features etched loss structure areas on both sides of the 50μm wide ridge waveguide,with a length of 150μm and a lateral etching depth of 10μm.The length of the lateral coupled grating is 700μm,with a period of 6.3μm and a duty cycle of 0.4.Experimental results indicate that at an injection current of 0.6 A,the output beam of the laser device maintains a“single-lobe”state,with a divergence angle of 5.92°and a spectral linewidth of 46 pm and the wavelength is 1058.7 nm.Compared to the wide ridge waveguide laser(WR-LD),these values represent reductions of 16.5%and 59.6%,respectively.The laser device achieves an output power of 259.19 mW and a slope efficiency of 0.52 W/A,which corresponds to increases of 25.6%and 33.3%compared to the WR-LD.Methods Based on the finite-difference time-domain(FDTD)method,this study utilizes higher-order lateral coupled gratings to narrow the linewidth and analyzes the relationship between limiting factors and etching depth.The lateral loss structure enhances the gain difference between the fundamental mode and higher-order transverse modes.By employing a loss clipping mechanism,it raises the gain threshold of the higher-order transverse modes,enabling fundamental transverse mode output at high current levels.Results and Discussions The threshold current of the LM-LC-DFB with the added lateral loss structure is approximately 120 mA,while the threshold current of the WR-LD is 90 mA.At a drive current of 0.3 A,the LMLC-DFB achieves an output power of 85.17 mW.As the drive current increases furthe

关 键 词：半导体激光器 窄线宽 侧向损耗结构 高阶侧向耦合光栅 侧向模式 

分 类 号：TN248.4[电子电信—物理电子学]