一维忆阻突触器件的类脑学习特性研究进展  

Progress on Brain-like Learning Properties of Onedimensional Memristor Synaptic Devices

作　　者：刘恒 季淼 刘雨菲 周珂欣 周慕瑶 齐红霞[1] LIU Heng;JI Miao;LIU Yufei;ZHOU Kexin;ZHOU Muyao;QI Hongxia(Jiangsu Normal University,JSNU SPBPU Institute of Engineering-SINO-RUSSIAN,Jiangsu 221116,China.)

机构地区：[1]江苏师范大学,江苏221116

出　　处：《电子技术(上海)》2025年第1期7-9,共3页Electronic Technology

基　　金：江苏师范大学大学生创新创业训练计划项目(XSJCX13067);江苏省卓越工程师教育培养计划2.0专业资助项目。

摘　　要：阐述一维忆阻突触器件的制备方法及其电学传输特性,并探讨了一维忆阻器件在类脑学习特性方面的研究进展。一维纳米线忆阻器件的制备方法多样,阻变材料种类繁多。由于其特有的阻变开关机制,忆阻器表现出类似神经突触的记忆和学习行为。This paper describes the progress of one-dimensional memristive device neuromorphic learning characteristics based on the fabrication of one-dimensional memristive devices,and their electrical transport characteristics.Various methods have been developed for the fabrication of one-dimensional nanowire memristive devices,using a diverse range of resistive switching materials.Due to its unique resistive switching mechanism,memristors possess memory and learning behaviors similar to neuralsynapses.

关 键 词：一维纳米线 忆阻器 阻变 神经突触 

分 类 号：TN60[电子电信—电路与系统] TP183[自动化与计算机技术—控制理论与控制工程] TN386.2[自动化与计算机技术—控制科学与工程]