旋涂法制备Bi_(2)S_(3)纳米棒及其忆阻器件的应用  

Study on the Preparation of Bi_(2)S_(3) Nanorods via Spin-Coating and Application in Memristive Devices

作　　者：王一 刘剑 齐娟娟 WANG Yi;LIU Jian;QI Juanjuan(School of Mechanical and Electronic Engineering,East China University of Technology,Jiangxi 330013,China.)

机构地区：[1]东华理工大学机械与电子工程学院,江西330013

出　　处：《电子技术(上海)》2025年第1期36-37,共2页Electronic Technology

摘　　要：阐述通过旋涂法制备Bi_(2)S_(3)纳米棒(NRs)及其在忆阻器件领域的应用。XRD和SEM测试结果显示,所制备纳米棒具有良好的结晶性和致密性。构建了结构为Ta/Bi_(2)S_(3) NRs/TiO_(2)/FTO的忆阻器件,器件表现出典型的双极型阻变开关特性,存储窗口电阻比约为25倍,在130次以上的循环测试中未观察到明显性能衰退,能够满足忆阻器件的应用需求。This paper describes the preparation of Bi,Ss nanorods(NRs)by spin coating method and their applications in the field of resistive memory devices.The XRD and SEM test results show that the prepared nanorods have good crystallinity and density.It constructed a memristive device with a structure of Ta/Bi_(2)S_(3) NRs/TiO_(2)/FTO,exhibiting typical bipolar resistive switching characteristics.The storage window resistance ratio is about 25 times,and no significant performance degradation was observed in more than 130 cycles of testing,which can meet the application requirements of memristive devices.

关 键 词：Bi_(2)S_(3)纳米棒 旋涂法 忆阻器 

分 类 号：TN0[电子电信—物理电子学] TB383.1[一般工业技术—材料科学与工程]