基于半绝缘4H-SiC单晶的α粒子探测器制备与性能分析  

Analysis of Preparation and Performance for Alpha Particle Detector Basedon Semi Insulated 4H SiC Single Crystal

作　　者：彭增涛 邹继军[1] 赖兴阳 葛子琪 熊震 PENG Zengtao;ZOU Jijun;LAI Xingyang;GE Ziqi;XIONG Zhen(Jiangxi Key Laboratory of Nuclear Physics and Nuclear Technology,East China University of Technology,Jiangxi330013,China.)

机构地区：[1]东华理工大学核物理与核技术江西省重点实验室,江西330013

出　　处：《电子技术(上海)》2025年第1期38-39,共2页Electronic Technology

基　　金：国家自然科学基金(12275049);江西省国际科技合作重点项目(20232BBH80005)。

摘　　要：阐述以半绝缘4H-SiC单晶衬底为α粒子探测器主体的实验。通过在正反两面分别沉积Ni/Au金属电极形成肖特基接触,成功制备了一种双肖特基结型α粒子探测器。探测器经过快速热退火后,在-200V的反向偏压下漏电流为0.6 nA。探究光照对器件的影响,结果表明环境光对器件性能影响较小。在不同偏压下进行α粒子能谱测试,结果表明探测器在-500 V时具有最佳能量分辨率23.21%。This paper describes an experiment using a semi insulating 4H SiC single crystal substrate as the main body of an alpha particle detector.A dual Schottky junction type alpha particle detector was successfully prepared by depositing Ni/Au metal electrodes on both sides to form Schottky contacts.After rapid thermal annealing,the detector has a leakage current of 0.6 nA under a reverse bias of-200 V.It explores the impact of lighting on devices,and the results show that ambient light has a relatively small effect on device performance.The alpha particle energy spectrum test was conducted under different biases,and the results showed that the detector had the best energy resolution of 23.21%at-500 V.

关 键 词：半绝缘4H-SiC Α粒子 能谱测试 

分 类 号：TN0[电子电信—物理电子学] TL816.3[核科学技术—核技术及应用]