电子束精炼FGH4096高温合金的高温氧化行为  

High Temperature Oxidation Behavior of FGH4096 Superalloy Prepared by Electron Beam Refining

作　　者：李梦贤 李毅 谭毅[1] 常凯 李鹏廷[1] LI Mengxian;LI Yi;TAN Yi;CHANG Kai;LI Pengting(Key Laboratory for Energy Beam Metallurgy and Advanced Materials Preparation of Liaoning Province,School of Materials Science and Engineering,Dalian University of Technology,Dalian 116024,China)

机构地区：[1]大连理工大学材料科学与工程学院,辽宁省载能束冶金与先进材料制备重点实验室,大连116024

出　　处：《机械工程材料》2025年第3期20-28,共9页Materials For Mechanical Engineering

基　　金：国家重点研发计划项目(2019YFA0705300)。

摘　　要：通过电子束精炼技术制备了氧杂质质量分数仅为0.0009%的FGH4096合金,在750℃和900℃下对该合金进行100 h恒温氧化试验,研究了氧化膜的表面形貌、截面结构及物相组成,分析了该合金的高温氧化行为,并与真空感应熔炼技术制备的氧杂质质量分数为0.0016%的FGH4096合金进行对比。结果表明:与真空感应熔炼制备的合金相比,电子束精炼制备的FGH4096合金在相同条件下高温氧化后的单位面积氧化质量增量和氧化膜厚度均较小,750,900℃温度下的平均氧化速率均小于0.1 g·m^(−2)·h^(−1),合金属于完全抗氧化级。在900℃下氧化100 h后,合金氧化膜由最外层的TiO_(2)和Co(Ni)Cr_(2)O_(4)、中间层的Cr_(2)O_(3)以及内层的Al_(2)O_(3)组成。与真空感应熔炼制备的合金相比,电子束精炼制备的合金氧化膜更薄,孔隙更少,均匀性和致密性更好,合金内氧化程度更轻。在氧化初期,合金表面生成TiO_(2)和Cr_(2)O_(3),随着氧化时间的延长,外层形成的Co(Ni)O与Cr_(2)O_(3)反应生成Co(Ni)Cr_(2)O_(4)尖晶石相,氧化膜逐渐致密,在低氧分压下于内层形成大量Al_(2)O_(3)。电子束精炼制备的合金内部氧杂质含量较低,缺陷数量较少,有效降低了合金内部n型半导体氧化物Al_(2)O_(3)沿晶界向内生长的速率,氧化膜厚度较小。The FGH4096 alloy with an oxygen impurity mass fraction of only 0.0009%was prepared by electron beam refining,and was subjected to constant temperature oxidation tests at 750℃and 900℃for 100 h.The surface morphology,cross-section structure,and phase composition of the oxide film were investigated,and the high temperature oxidization behavior of the alloy was analyzed and compared with that of the FGH4096 alloy with an oxygen impurity mass fraction of 0.0016%prepared by vacuum induction melting.The results show that compared with those of the alloy prepared by vacuum induction melting,the increment of oxidizing mass per unit area and the thickness of oxide film of the FGH4096 alloy prepared by electron beam refining after high temperature oxidation under the same conditions were smaller,and the average oxidation rates at the oxidizing temperatures of 750,900℃were both less than 0.1 g·m^(−2)·h^(−1);the alloy was complete oxidation resistant.After oxidation at 900℃for 100 h,the oxide film of the alloy consisted of TiO_(2) and Co(Ni)Cr_(2)O_(4) in the outermost layer,Cr_(2)O_(3) in the middle layer and Al_(2)O_(3) in the inner layer.Compared with those of the alloy prepared by vacuum induction melting,the oxide film of the alloy prepared by electron beam refining was thinner with less porous and better uniformity and densification,and the alloy had lighter degree of internal oxidation.At the initial stage of oxidation,TiO_(2) and Cr_(2)O_(3) were formed on the surface of the alloy.With the extension of oxidation time,Co(Ni)O generated in the outer layer reacted with Cr_(2)O_(3) to form Co(Ni)Cr_(2)O_(4) spinel phase;the oxide film was gradually dense,and a large amount of Al_(2)O_(3) was formed in the inner layer at low oxygen partial pressure.The content of oxygen impurities in the alloy by electron beam refining was relatively low,the number of defects was relatively few,which effectively reduced the growth rate of n-type semiconductor oxide Al_(2)O_(3) along the grain boundaries,resulting in the rela

关 键 词：FGH4096高温合金 电子束精炼 杂质元素 抗氧化性能 

分 类 号：TG174.2[金属学及工艺—金属表面处理]