GaN-based blue laser diodes with output power of 5 W and lifetime over 20000 h aged at 60℃  

作　　者：Lei Hu Siyi Huang Zhi Liu Tengfeng Duan Si Wu Dan Wang Hui Yang Jun Wang Jianping Liu 

机构地区：[1]Suzhou Ganbright Optoelectronics Technology Co.,Ltd,Suzhou 215000,China [2]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215000,China [3]Suzhou Everbright Photonics Co.,Ltd,Suzhou 215000,China

出　　处：《Journal of Semiconductors》2025年第4期9-11,共3页半导体学报(英文版)

基　　金：supported by the Natural Science Foundation of Jiangsu Province(Grant.BK20232042).

摘　　要：Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LEDs[7,8].However,it took much longer time for GaN-based LDs to achieve high power,high wall plug efficiency,and long lifetime.Until 2019,Nichia reported blue LDs with these performances[9],which open wide applications with GaN-based blue LDs.

关 键 词：Blue laser diodes P type doping LIFETIME Output power Stimulated emission GAN based laser diodes stimulated emission lasing laser diodes lds 

分 类 号：TN248.4[电子电信—物理电子学]