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作 者:Shuo Li Wenxu Yin Weitao Zheng Xiaoyu Zhang
机构地区:[1]School of Materials Science and Engineering,Jilin University,Changchun 130012,China
出 处:《Journal of Semiconductors》2025年第4期55-61,共7页半导体学报(英文版)
基 金:support from the National Key Research and Development Program of China(2024YFA1207700);National Natural Science Foundation of China(52072141,52102170).
摘 要:The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investigates how quantum confinement governs the charge transport,exciton dynamics,and emission efficiency in QD-LEDs,using CsPbI_(3) QDs as a model system.By systematically varying QD sizes,we reveal size-dependent trade-offs in LED performance,such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities.Our findings offer critical insights into the design of high-performance QD-LEDs,paving the way for scalable and energy-efficient optoelectronic devices.
关 键 词:quantum confinement effect CsPbI_(3) quantum dot light-emitting diode
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