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作 者:Napasuda Wichaiyo Yuyao Wei Chao Ding Guozheng Shi Witoon Yindeesuk Liang Wang Huān Bì Jiaqi Liu Shuzi Hayase Yusheng Li Yongge Yang Qing Shen
机构地区:[1]Graduate School of Engineering Science,the University of Electro-Communications,Tokyo 1828585,Japan [2]School of Science,King Mongkut’s Institute of Technology Ladkrabang,Bangkok 10520,Thailand
出 处:《Journal of Semiconductors》2025年第4期63-70,共8页半导体学报(英文版)
基 金:supported by MEXT KAKENHI Grant(24K01295,26286013).
摘 要:Traditional p-type colloidal quantum dot(CQD)hole transport layers(HTLs)used in CQD solar cells(CQDSCs)are commonly based on organic ligands exchange and the layer-by-layer(LbL)technique.Nonetheless,the ligand detachment and complex fabrication process introduce surface defects,compromising device stability and efficiency.In this work,we propose a solution-phase ligand exchange(SPLE)method utilizing inorganic ligands to develop stable p-type lead sulfide(PbS)CQD inks for the first time.Various amounts of tin(Ⅱ)iodide(SnI_(2))were mixed with lead halide(PbX_(2);X=I,Br)in the ligand solution.By precisely controlling the SnI_(2)concentration,we regulate the transition of PbS QDs from n-type to p-type.PbS CQDSCs were fabricated using two different HTL approaches:one with 1,2-ethanedithiol(EDT)-passivated QDs via the LbL method(control)and another with inorganic ligand-passivated QD ink(target).The target devices achieved a higher power conversion efficiency(PCE)of 10.93%,compared to 9.83%for the control devices.This improvement is attributed to reduced interfacial defects and enhanced carrier mobility.The proposed technique offers an efficient pathway for producing stable p-type PbS CQD inks using inorganic ligands,paving the way for high-performance and flexible CQD-based optoelectronic devices.
关 键 词:quantum dot solar cells hole transport layer PBS p-type ink inorganic ligands
分 类 号:TM914.4[电气工程—电力电子与电力传动]
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