Molecular sieves assisted chemical vapor deposition preparation of high-κdielectric m-ZrO_(2)nanosheets  

作　　者：Ting Lu Zhuojun Duan Ling Zhang Yuanyuan Jin Huimin Li Song Liu 

机构地区：[1]College of Chemistry and Chemical Engineering,Hunan University,Changsha 410082,China [2]Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong 999077,China [3]Shenzhen Research Institute,Hunan University,Shenzhen 518000,China

出　　处：《Journal of Semiconductors》2025年第4期100-107,共8页半导体学报(英文版)

基　　金：support from the National Natural Science Foundation of China(No.21975067);Shenzhen Science and Technology Program(No.JCYJ20220530160407016).

摘　　要：In order to address challenges posed by the reduction in transistor size,researchers are concentrating on two-dimensional(2D)materials with high dielectric constants and large band gaps.Monoclinic ZrO_(2)(m-ZrO_(2))has emerged as a promising gate dielectric material due to its suitable dielectric constant,wide band gap,ideal valence-band offset,and good thermodynamic stability.However,current deposition methods face compatibility issues with 2D semiconductors,highlighting the need for high-quality dielectrics and interfaces.Here,high-quality 2D m-ZrO_(2)single crystals are successfully prepared using a onestep chemical vapor deposition(CVD)method,aided by 5A molecular sieves for oxygen supply.The prepared ZrO_(2)is utilized as a gate dielectric in the construction of MoS2 field-effect transistors(FETs)to investigate its electrical property.The FETs exhibit a high carrier mobility of up to 5.50 cm^(2)·V^(−1)·s^(−1),and a current switching ratio(Ion/off)of approximately 10^(4),which aligns with the current standards of logic circuits,indicating that ZrO_(2)has application value as a gate dielectric.The successful onestep preparation of single-crystal ZrO_(2)paves the way for the utilization of high-κgate dielectrics and creates favorable conditions for the development of high-performance semiconductor devices,offering new possibilities for transistor miniaturization.

关 键 词：ZrO_(2) high-κgate dielectric chemical vapor deposition field effect transistors molecular sieves 

分 类 号：TN386[电子电信—物理电子学] O469[理学—凝聚态物理]