考虑损耗与应力下SiC模块的电路参数设计  

Design of Circuit Parameters of SiC Module Considering Loss and Stress

作　　者：荀博洋 郝凤斌 柏松 高俊开 XUN Bo-yang;HAO Feng-bin;BAI Song;GAO Jun-kai(National Key Laboratory of Wide Bandgap Semiconductor Devices and Integration Technology,Nanjing 210016,China;Yangzhou Guoyang Electronics.Co.,Ltd.,Yangzhou 225100,China)

机构地区：[1]宽禁带半导体器件与集成技术全国重点实验室,江苏南京210016 [2]扬州国扬电子有限公司,江苏扬州225100

出　　处：《电力电子技术》2025年第4期121-124,共4页Power Electronics

基　　金：国家自然科学基金重点项目(12035019);江苏省重点研发计划(BE2022048-2)。

摘　　要：相比于传统的Si器件,SiC器件能够提高开关频率,从而进一步提升电力电子变换器的系统效率和功率密度。然而,过快的开关速度会产生较高的电压变化率和电流变化率,给驱动电路的设计带来了挑战。为此,本文以SiC金属-氧化物半导体场效应晶体管(MOSFET)功率模块为例,通过双脉冲测试电路,分析了驱动电路参数包括驱动电阻和驱动电容对开关特性的影响,并提出了综合考虑开关损耗和电压应力的驱动电路参数设计方法。实验结果表明,较小的驱动电阻和驱动电容能够减小损耗,但会引入更大的电压变化率。最后,给出了最优的驱动参数使得开关损耗和电压应力均最小。Compared to traditional Si devices,SiC devices can increase switching frequency,thereby further enhancing the system efficiency and power density of power electronic converters.However,the rapid switching of SiC devices can induce high voltage rate of change and current rate of change,posing challenges for the design of drive circuits.Therefore,SiC metal-oxide-semiconductor field-effect transistor(MOSFET)power module is taken as an example to analyze the impact of drive circuit parameters,including drive resistance and drive capacitance,on switching characteristics through a double-pulse test circuit.It proposes methods for designing drive circuit parameters that comprehensively consider switching losses and voltage stress.Experimental results indicate that smaller drive resistance and drive capacitance can reduce losses but also introduce higher voltage rate of change.Finally,the optimal drive parameters are provided to minimize both switching losses and voltage stress.

关 键 词：金属-氧化物半导体场效应晶体管 开关损耗 驱动电路 

分 类 号：TN32[电子电信—物理电子学]