等离子体硅沉积对XLPE/SIR界面放电的影响研究  

Effect of plasma silicon deposition on XLPE/SIR interface discharge

作　　者：燕一博 夏国巍 段祺君 骆立衡 尹国华 谢庆[1] YAN Yibo;XIA Guowei;DUAN Qijun;LUO Liheng;YIN Guohua;XIE Qing(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources,North China Electric Power University,Baoding 071003,China;Beijing Smart Energy Research Institute,Beijing 102209,China)

机构地区：[1]华北电力大学新能源电力系统国家重点实验室,河北保定071003 [2]北京智慧能源研究院,北京102209

出　　处：《绝缘材料》2025年第4期82-89,共8页Insulating Materials

基　　金：国家自然科学基金资助项目(52277147);北京市自然科学基金资助项目(3222057);中国博士后科学基金资助项目(2023M741322)。

摘　　要：电缆接头的交联聚乙烯(XLPE)与硅橡胶(SIR)界面发生放电是导致电缆故障的主要原因之一。为改善这一现象,本文对XLPE样片表面进行不同时间等离子体硅沉积处理,并对其进行微观形貌测试和界面放电实验。结果表明:等离子体硅沉积技术能有效提高XLPE/SIR界面的耐压性能。随着等离子体硅沉积处理时间的增加,XLPE样片表面粗糙度先减小后增大,其变化趋势与XLPE/SIR界面的起始放电电压、击穿电压和升压幅值的变化趋势相同,与表面电阻率的变化趋势相反。其中,处理时间为3 min的XLPE样片具有最小的表面粗糙度(R_(a)=41.8 nm)和最大的表面电阻率(857×10^(12)Ω)。在该处理时间下,XLPE/SIR界面的实际接触面积最大、界面的微孔隙数量最少、击穿电压提升幅度最大,其中击穿电压相对于未处理XLPE/SIR界面提升了66.7%。Interfacial discharge between XLPE and SIR in cable joints is one of the main causes of cable failure.In order to improve this phenomenon,the XLPE sample surface was treated by plasma silicon deposition with different time,and the micro-morphology and interface discharge tests were carried out.The results show that the plasma silicon deposition technology can effectively improve the voltage resistance of XLPE/SIR interface.With the increase of plasma silicon deposition treatment time,the surface roughness of XLPE sample decreases at first and then increases,and its change trend is the same as that of the initial discharge voltage,breakdown voltage,and voltage increase amplitude of XLPE/SIR interface,and is opposite to that of the surface resistivity.The XLPE sample after 3 min of plasma silicon deposition has the smallest surface roughness(R_(a)=41.8nm)and the largest surface resistivity(857×10^(12)Ω).Under this treatment time,the XLPE/SIR interface has the largest actual contact area,the fewest micro-pores,and the largest increase in breakdown voltage.Among them,the breakdown voltage increases by 66.7%compared with the untreated XLPE/SIR interface.

关 键 词：等离子体硅沉积 交联聚乙烯 硅橡胶 界面放电 表面粗糙度 

分 类 号：TM853[电气工程—高电压与绝缘技术]