Unique composite architecture of phosphor-in-glass film coated on different heat-conducting substrates for high-brightness laser lighting  

作　　者：Xin Liu Mingxiang Chen Jiuzhou Zhao Hongjin Zhang Yang Peng Qing Wang 

机构地区：[1]State Key Laboratory of Intelligent Manufacturing Equipment and Technology,School of Mechanical Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China [2]School of Aerospace Engineering,Huazhong University of Science and Technology,Wuhan 430074,China [3]School of Energy and Power Engineering,Huazhong University of Science and Technology,Wuhan 430074,China

出　　处：《Journal of Advanced Ceramics》2025年第2期151-158,共8页先进陶瓷(英文)

基　　金：supported by the National Natural Science Foundation of China(No.52475594);the National Key R&D Program of China(No.2022YFB3604803).

摘　　要：In the development of static luminescent materials with remarkable optical-thermal performance and low cost, next-generation high-brightness laser lighting faces a key challenge. Herein, a unique composite architecture of Y3Al5O_(12):Ce^(3+) (YAG) phosphor-in-glass film coated on different heat-conducting substrates (PiGF@HCSs), i.e., PiGF@sapphire, PiGF@Al_(2)O_(3), PiGF@AlN, and PiGF@BN–AlN composites, was designed and prepared by a simple film printing and low-temperature sintering technology. The heat-conducting substrates significantly affect the luminescence saturation and phosphor conversion of PiGF@HCSs, allowing substrates with higher thermal conductivity (TC) to have a higher laser power density (LPD) and higher reflectivity to enable higher luminous efficacy (LE). As a consequence, PiGF@sapphire realizes a luminous flux (LF) of 2076 lm@12 W/mm^(2), which is higher than those of PiGF@Al_(2)O_(3) (1890 lm@15 W/mm^(2)) and PiGF@AlN (1915 lm@24 W/mm^(2)), whilePiGF@BN–AlN enables a maximum LF of 3058 lm@21 W/mm^(2). Furthermore, the LE of PiGF@BN–AlN reaches 194 lm/W, which is 1.6 times that of PiGF@AlN, while those of PiGF@sapphire and PiGF@Al_(2)O_(3) are 192 and 150 lm/W, respectively. The working temperature of PiGF@AlN is only 93.3℃ under LPD of 9 W/mm^(2), while those of PiGF@sapphire, PiGF@Al_(2)O_(3), and PiGF@BN–AlN increase to 193.8, 133.6, and 117℃, respectively. These findings provide guidance for commercial applications of PiGF@HCS converters in high-brightness laser lighting and displays.

关 键 词：luminescent materials phosphor-in-glass film(PiGF) heat-conducting substrate(HCS) laser lighting optical-thermal performances 

分 类 号：TB34[一般工业技术—材料科学与工程]