WO_(3)/α-Fe_(2)O_(3)忆阻器的制备及其阻变存储机制研究  

Preparation and resistance storage mechanism of WO_(3)/α-Fe_(2)O_(3)memristor

作　　者：曲信儒 余志强 贾金皓[1] 康文博 王清成 QU Xinru;YU Zhiqiang;JIA Jinhao;KANG Wenbo;WANG Qingcheng(School of Automation,Guangxi University of Science and Technology,Liuzhou 545616,China;School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,China;Wuhan National Laboratory for Optoelectronics(Huazhong University of Science and Technology),Wuhan 430074,China)

机构地区：[1]广西科技大学自动化学院,广西柳州545616 [2]华中科技大学光学与电子信息学院,湖北武汉430074 [3]武汉光电国家研究中心(华中科技大学),湖北武汉430074

出　　处：《广西科技大学学报》2025年第2期77-84,共8页Journal of Guangxi University of Science and Technology

基　　金：广西科技计划项目(桂科AD19110038);广西科技大学博士基金项目(校科博19Z07)资助。

摘　　要：WO_(3)材料具有优异的电学性能,但在忆阻器应用中开发不足。采用水热法和退火工艺在FTO衬底上制备α-Fe_(2)O_(3)种子层,再利用浸泡法和退火工艺在种子层上制备一层WO_(3)薄膜,形成WO_(3)/α-Fe_(2)O_(3)异质结薄膜,进而探究WO_(3)/α-Fe_(2)O_(3)/FTO结构器件的双极性阻变存储行为。其次,通过在自然条件下的保留性试验、电化学金属化模型、氧空位导电丝的形成与断裂来探究忆阻器的阻变存储机制。此外,通过惠普实验室仿真模型,对W/WO_(3)/α-Fe_(2)O_(3)/FTO结构忆阻器模型进行仿真,建立更符合W/WO_(3)/α-Fe_(2)O_(3)/FTO结构忆阻器的Simulink模型,结果表明该模型具有较高的吻合度。本文所设计的W/WO_(3)/α-Fe_(2)O_(3)/FTO忆阻器不仅在制备中有更多优势,在非易失性多电平存储器应用方面也有更好的应用前景。WO_(3)material exhibits excellent electrical properties but remains underdeveloped in memristor applications.In this paper,the WO_(3)/α-Fe_(2)O_(3)heterojunction resistance layer for WO_(3)was developed by soaking and annealing treatment.For the heterojunction,theα-Fe_(2)O_(3)seed layer was prepared on the FTO substrate by hydrothermal method and annealing process,and a WO_(3)film was prepared on the seed layer by soaking method and annealing process to form WO_(3)/α-Fe_(2)O_(3)heterojunction film.In addition to studying the related electrical properties of WO_(3)/α-Fe_(2)O_(3)heterojunction,the bipolar resistive storage behavior of WO_(3)/α-Fe_(2)O_(3)/FTO devices was also investigated.The non-volatility,reliability and reproducible switching characteristics of the device were proved by the retention test under natural conditions.Based on the electrochemical metallization model,the mechanism of resistive storage can be explained by the formation and fracture of conductive wires with oxygen vacancies.In order to deepen the further exploration of the memristor model,the structure of the memristor model was simulated and the Simulink model was established,which achieved a good agreement.This study shows that W/WO_(3)/α-Fe_(2)O_(3)/FTO structure memristors have better application prospects in non-volatile multilevel memory applications.Keywords:memristor;W/WO_(3)/α-Fe_(2)O_(3)/FTO;soaking method;oxygen vacancies.

关 键 词：忆阻器 W/WO_(3)/α-Fe_(2)O_(3)/FTO 浸泡法 氧空位 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] TB383[自动化与计算机技术—计算机科学与技术]