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作 者:Yifan Liu Shiqi Li Chenxi Zhang Yuying Hao 刘一凡;李仕奇;张晨曦;郝玉英(太原理工大学物理学院,太原030024;英国伦敦玛丽女王大学物理与化学科学学院,伦敦E14NS;太原理工大学电子信息与光学工程学院,太原030024)
机构地区:[1]College of Physics,Taiyuan University of Technology,Taiyuan 030024,China [2]School of Physical and Chemical Sciences,Queen Mary University of London,London E14NS,UK [3]College of Electronic Information and Optical Engineering,Taiyuan University of Technology,Taiyuan 030024,China
出 处:《Chinese Journal of Chemical Physics》2025年第2期222-230,I0040,共10页化学物理学报(英文)
基 金:supported by the National Natural Scientific Foundation of China(No.62305243);Fundamental Research Program of Shanxi Province(Nos.20210302124629,20210302124163,20210302124392,202203021212217);funded by China Scholarship Council。
摘 要:Poly(3-hexylthiophene)(P3HT)has been used in CsPbI_(3)per-ovskite solar cells(PSCs)as the hole transport layer(HTL),due to its excellent hydrophobic prop-erty and cheap cost.However,the inevitable defects in perovskite lead to the limited photovoltaic performance of CsPbI_(3)PSCs.In this study,diethylammonium io-dide(DEAI)was doped as an ad-ditive to passivate the defects in P3HT based CsPbI_(3)perovskite.Considering the diethylamine cations can effectively form hydrogen bonds with halide ion,the DEAI doping method could not only reduce the defect density but also facilitate the extraction and transport of carriers in the device.The optimal power conversion efficiency of the device prepared with DEAI doping method increases from 14.68%to 16.75%.In addition,the stability of the device is also signifi-cantly upgraded due to the improvement of CsPbI_(3)perovskite film.This work can provide re-liable theoretical and experimental evidence for further PSCs research.聚(3-己基噻吩)由于其优异的疏水性和低廉的成本,常被选作CsPbI3钙钛矿太阳电池的空穴传输层材料.另外,CsPbI3的本征缺陷会导致CsPbI3钙钛矿太阳电池光电性能受限.在本研究中,将碘化乙二胺作为添加剂,以掺杂的形式钝化CsPbI3钙钛矿中的缺陷.考虑到乙二胺阳离子可以有效地与卤素离子形成氢键,碘化乙二胺掺杂方法不仅可以降低缺陷密度,而且可以促进器件内载流子的抽取和传输.碘化乙二胺掺杂方法将以聚(3-己基噻吩)作为空穴传输层的CsPbI3-PSCs效率从14.68%提高到16.75%.此外,由于CsPbI3薄膜性质的改善,相应器件的稳定性也得到了显著提升.本工作为CsPbI3钙钛矿太阳电池的进一步研究提供可靠的理论和实验依据.
关 键 词:CsPbI_(3)perovskite solar cell Diethylammonium iodide Poly(3-hexylthiophene) Defect passivation
分 类 号:TM914.4[电气工程—电力电子与电力传动]
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