Elimination of Buried Interface Defects for Highly Efficient and Stable Wide-Bandgap Perovskite Solar Cells  

消除埋藏界面缺陷以制备高效稳定宽禁带钙钛矿太阳能电池

作　　者：Kun Chen Yu Chen Yang Shen Weijian Tang Xiaojia Zheng WenHua Zhang Shangfeng Yang 陈坤;陈雨;沈阳;唐维健;郑霄家;张文华;杨上峰(中国工程物理研究院化工材料研究所,四川省新材料研究中心,成都610200;上海交通大学人工结构与量子调控教育部重点实验室,上海200240;云南大学云南省碳中和与绿色低碳技术重点实验室,昆明650000;中国科学技术大学材料科学与工程系,合肥微尺度物质科学国家研究中心,中国科学院能量转换材料重点实验室,量子信息与量子物理协同创新中心,合肥230026)

机构地区：[1]Sichuan Research Center of New Materials,Institute of Chemical Materials,China Academy of Engineering Physics,Chengdu 610200,China [2]Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education),Shanghai Jiao Tong University,Shanghai 200240,China [3]Yunnan Key Laboratory of Carbon Neutrality and Green Low-carbon Technologies,Yunnan University,Kunming 650000,China [4]Hefei National Laboratory for Physical Sciences at the Microscale,CAS Key Laboratory of Materials for Energy Conversion,Department of Materials Science and Engineering,Synergetic Innovation Center of Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China

出　　处：《Chinese Journal of Chemical Physics》2025年第2期231-239,I0020-I0034,I0040,I0041,共26页化学物理学报(英文)

基　　金：the support from Huacai Solar Co.Ltd。

摘　　要：As one of the important components of high-effi-ciency perovskite/silicon series devices,wide-bandgap(WBG)perovskite solar cells(PSCs)have been suffering from serious carrier transport barriers and huge open-circuit voltage deficit de-rived from non-radiative recombination,especial-ly at the buried interface that are often overlooked.Herein,we combined cationic and anion passiva-tion strategies via ammonium tetra-n-butyl tetrafluoroborate(TBABF_(4))pre-treating the buried interface.Theoretical calculation predicts that the tetrabutylammonium(TBA^(+))organic cations and(tetrafluoroborate)BF_(4)^(−)anions can easily interact with charged interfacial defect.Characterizations further confirm the enhance-ment of carrier transport performance and decrease in defect density upon TBABF4 pre-treat-ment.Consequently,a power conversion efficiency of 21.35%with an ultrahigh filling factor of 84.12%is obtained for 1.68 eV-WBG inverted PSCs.In addition,the device with TBABF4 pre-treatment demonstrates excellent shelf,thermal,and operational stability.作为高效钙钛矿/硅系列器件的重要组成部分之一,宽带隙钙钛矿太阳能电池存在严重的载流子输运障碍和非辐射复合引起的巨大开路电压亏缺,特别是埋地界面处的电压亏缺常被忽视.本文通过四氟硼酸四正丁基铵预处理埋藏界面,结合了阳离子和阴离子钝化策略.理论计算表明,四丁基铵有机阳离子和四氟硼酸盐BF4-阴离子容易与带电界面缺陷发生相互作用.表征进一步证实了四氟硼酸四正丁基铵预处理后载流子输运性能的增强和缺陷密度的降低.因此,对于1.68 eV宽带隙倒置型宽带隙钙钛矿太阳能电池,获得了21.35%的功率转换效率和84.12%的超高填充系数.此外,经四氟硼酸四正丁基铵预处理的器件表现出优异的存储稳定性、热稳定性和操作稳定性.

关 键 词：Wide-bandgap Buried interface Carrier transport Stablility Defect passiva-tion 

分 类 号：TM914.4[电气工程—电力电子与电力传动]