Cr掺杂TaSe_(2)单晶的制备及其物性研究  

Preparation and physical properties study of Cr doped TaSe_(2) single crystals

作　　者：吕垚 龚毅 霍德璇[1] 杨琳 Lü Yao;GONG Yi;HUO Dexuan;YANG Lin(College of Materials and Environmental Engineering,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China)

机构地区：[1]杭州电子科技大学材料与环境工程学院,杭州310018

出　　处：《杭州电子科技大学学报(自然科学版)》2025年第2期97-102,共6页Journal of Hangzhou Dianzi University:Natural Sciences

基　　金：国家自然科学基金项目(12104120)。

摘　　要：过渡金属二硫族化合物(TMDs)因其准二维的结构与丰富的电子性质引起了广泛的研究。掺杂是调控材料物性的直接有效手段,掺入3d磁性元素可能会引起母体物理性质出现显著的变化。探究掺杂对这类材料的影响对更深入理解TMDs的内在机制有着极为重要的意义。我们成功地生长了Cr掺杂过渡金属二硫化物单晶Cr_((1-x))Ta_(x)Se_(2)(x≈0.5),并测量了其磁性能与电输运性能。磁性能测试发现样品在超导转变温度为6.4 K时出现铁磁相变,电输运测试则发现单晶在50 K-300 K范围内的绝缘体行为。我们的结果对掺杂调控过渡金属二硫族化合物以及二维磁性材料的发展提供了研究基础。Transition metal dichalcogenides(TMDs) have attracted considerable research interest due to their quasi-two-dimensional(2D) structure and rich physical properties.Doping is a direct and effective strategy to modulate the physical properties of a material.By doping 2D TMDs with 3D transition metal elements,their physical properties can be effectively tuned.We have successfully grown the single crystals of Cr-doped TMDs,Cr_(1-x)Ta_xSe_(2 )(x≈0.5),and systematically measured their magnetic and transport properties.The material exhibits insulating behavior with a ferromagnetic transition occurring around Tc=6.4 K.More investigations will be simulated on the research of doping controlled 2D TMDs and the development of 2D magnetic materials.

关 键 词：二维磁性材料 单晶 掺杂 铁磁相变 

分 类 号：O469[理学—凝聚态物理]