CMOS Temperature Sensors:From Module Design to System Design  

作　　者：Zhong Tang Xiao-Peng Yu Zheng Shi Nianxiong Nick Tan 

机构地区：[1]Vango Technologies,Inc.,Hangzhou 310053,China [2]Zhejiang Univerisity,Hangzhou 310027,China

出　　处：《Chinese Journal of Electronics》2025年第1期16-25,共10页电子学报(英文版)

基　　金：supported by 2025 Key Technology Innovation Program of Ningbo City(Grant No.2022Z091)。

摘　　要：In a smart complementary metal-oxide semiconductor(CMOS)temperature sensor,the temperature information is converted to an electrical signal,such as voltage,current,or time delay,and then it is digitized by an analog-to-digital converter.Instead of categorizing sensors according to their sensing elements,this work introduces different CMOS temperature sensors based on their signal processing domains of the readout circuits.To design a suitable sensor for a specific application,two general design methodologies are also introduced with state-of-the-art examples.Depending on the applications,the corresponding types of the sensor and design methodology can be chosen to optimize the performance.

关 键 词：CMOS temperature sensor Time domain Voltage domain Bipolar junction transistor metal-oxide-semiconductor field-effect transistor 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]