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作 者:张晴怡 杨羽欣 刘凯 王雷 陈峰 徐春祥[3] ZHANG Qingyi;YANG Yuxin;LIU Kai;WANG Lei;CHEN Feng;XU Chunxiang(School of Physical and Mathematical Sciences,Nanjing Tech University,Nanjing 211816,China;2011 College,Nanjing Tech University,Nanjing 211816,China;School of Electronic Science and Engineering,Southeast University,Nanjing 210096,China)
机构地区:[1]南京工业大学数理科学学院,江苏南京211816 [2]南京工业大学2011学院,江苏南京211816 [3]东南大学电子科学与工程学院,江苏南京210096
出 处:《发光学报》2025年第4期582-596,共15页Chinese Journal of Luminescence
基 金:国家自然科学基金(62104103,62275120)。
摘 要:作为第三代半导体电子器件中最著名的n型金属氧化物之一,氧化锌因具有高检出率、高光学增益、高灵敏度等特点常用于高性能紫外光电探测器的构筑。氧化锌的光电导行为强烈依赖于其表界面性质和导带附近的缺陷态对光生载流子的捕获和去捕获。研究发现,由于载流子的损耗和缺陷捕获,在ZnO器件中还能够观察到持续光电导现象(Persistent photoconductivity)甚至负光电导(Negative photoconductivity,NPC)效应。本文从ZnO器件的正光电导机理出发,详细介绍了ZnO基器件中在不同制备条件和环境温度、不同驱动方式、介质复合和异质结构中观察到的负光电导现象及其产生负光电导效应的微观物理机制。氧化锌负光电导特性的研究可为构建高效逻辑电路、发光二极管、太阳能电池和超高分辨率成像传感器提供新思路。As one of the best-known n-type metal oxides in third-generation semiconductor electronic devices,in particular,with its high detection rate,high optical gain,and high sensitivity,ZnO is commonly used in the construction of high-performance ultraviolet photodetectors.The photoconductivity behavior of zinc oxide strongly depends on its surface interface properties,the trapping and detrapping of photogenerated carriers by defect states near the conduction band.Researches have found that persistent photoconductivity and even negative photoconductivity(NPC)effects can be observed in ZnO devices due to carrier loss and defect trapping.This paper starts from the positive photoconductivity mechanism of ZnO devices,and provides a detailed introduction to the negative photoconductivity phenomena observed in ZnO-based devices under different preparation conditions and ambient temperatures,different driving methods,dielectric recombination,and heterostructures,as well as the microscopic physical mechanisms responsible for the negative photoconductivity effect.Underlying the NPC effect of ZnO can provide a feasible approach for constructing highly efficiency logic circuits,light-emitting diodes,solar cells,and ultra-high resolution imaging sensors.
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