AlGaAs插入结构对InAlGaAs/AlGaAs多量子阱发光特性的影响  

Influence of AlGaAs Insertion Structure on Luminescence Characteristics of InAlGaAs/AlGaAs Multiple Quantum Wells

作　　者：赵书存 王海珠 王登魁 甘露露 王祯胜 吕明辉 马晓辉 ZHAO Shucun;WANG Haizhu;WANG Dengkui;GAN Lulu;WANG Zhensheng;LYU Minghui;MA Xiaohui(State Key Laboratory of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China;Research Institute of Chongqing,Changchun University of Science and Technology,Chongqing 401135,China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022 [2]长春理工大学重庆研究院,重庆401135

出　　处：《发光学报》2025年第4期683-690,共8页Chinese Journal of Luminescence

基　　金：重庆市自然科学基金(cstc2021jcyjmsxmX1060,CSTB2022NSCQ-MSX0401)。

摘　　要：InAlGaAs/AlGaAs多量子阱(MQWs)因其较宽的光谱范围,在近红外及可见光区域受到越来越多的关注,并已经成为新兴的研究热点。本研究采用MOCVD生长技术制备InAlGaAs/AlGaAs多量子阱材料,依据选取插入层(ISL)材料时需要考虑的主要因素及理论计算,探究插入层结构对量子阱发光性质的影响。设计并生长了无插入层的InAlGaAs量子阱及不同厚度不同Al组分的AlGaAs插入层。实验结果表明,插入层的引入显著提高了量子阱的发光强度,虽然样品中本身存在局域态,但插入层的存在并未引入更多局域态,同时插入层的存在不会改变量子阱中载流子复合机制。研究结果为InAlGaAs量子阱的结构优化及插入层技术提供了重要的理论分析和实验数据,表明通过合理设计插入层可以显著提高InAlGaAs量子阱的光学性能。InAlGaAs/AlGaAs multiple quantum wells(MQWs)have attracted increasing attention in the near-infrared and visible light fields due to their wide spectral range,and have become an emerging research hotspot.This study uses metal organic chemical vapor deposition(MOCVD)growth technology to prepare InAlGaAs/AlGaAs multi quantum well materials.Based on the main factors and theoretical calculation methods that need to be considered when selecting the insertion layer(ISL)material,the influence of the insertion layer structure on the luminescence properties of quantum wells is explored.We designed and grew InAlGaAs quantum wells without an insertion layer,as well as InAlGaAs quantum wells with AlGaAs insertion layers of varying thicknesses and Al compositions.The experimental results show that the introduction of the insertion layer significantly improves the luminescence intensity of the quantum well.Although there are localized states in the sample itself,the presence of the insertion layer does not introduce more localized states,and the presence of the insertion layer does not change the carrier recombination mechanism in quantum wells.The research results provide important theoretical analysis and experimental data for the structural optimization and insertion layer technology of InAlGaAs quantum wells,indicating that the optical performance of InAlGaAs quantum wells can be significantly improved by designing the insertion layer reasonably.

关 键 词：InAlGaAs多量子阱 插入层 金属有机化合物化学气相沉积(MOCVD) 

分 类 号：O482.31[理学—固体物理]