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作 者:段昊男 姬中华[1,2] 刘伟新 苏殿强 李经宽 赵延霆[1,2] DUAN Haonan;JI Zhonghua;LIU Weixin;SU Dianqiang;LI Jingkuan;ZHAO Yanting(State Key Laboratory of Quantum Optics Technologies and Devices,Institute of Laser Spectroscopy,Shanxi University,Taiyuan 030006,China;Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China;Department of Physics,Xinzhou Teachers’University,Xinzhou 034000,China;School of Electric Power,Civil Engineering and Architecture,Shanxi University,Taiyuan 030013,China)
机构地区:[1]山西大学激光光谱研究所,光量子技术与器件全国重点实验室,太原030006 [2]山西大学,极端光学协同创新中心,太原030006 [3]忻州师范学院物理系,忻州034000 [4]山西大学电力与建筑学院,太原030013
出 处:《物理学报》2025年第8期136-142,共7页Acta Physica Sinica
基 金:国家重点研发计划(批准号:2022YFA1404203);国家自然科学基金(批准号:12274272,12034012);高等学校学科创新引智基地(111计划)(批准号:D18001)资助的课题.
摘 要:在室温铯原子气室中利用探测光(852 nm)与耦合光(510 nm)构建的里德伯阶梯型结构,实现了基于射频场缀饰的直流电场Floquet-电磁诱导透明(Floquet-electromagnetically induced transparency,Floquet-EIT)光谱,并研究了直流电场下的Floquet-EIT光谱特性.实验发现,仅射频电场作用时,EIT光谱只呈现偶数阶边带,而当射频场与直流电场同时作用时,实验观测到Floquet-EIT的一阶边带信号.随着直流电场强度增大,一阶边带幅值逐渐升高.然而,当直流电场增大到一定强度时,强电场会导致边带间相互串扰,使边带幅值下降,但增大射频频率可以延缓直流电场对一阶边带的串扰影响.最后对比Floquet-EIT光谱的边带幅值与DC-Stark光谱的频率偏移在微弱直流电场下的相对标准偏差,发现前者在微弱电场下的测量精确度明显优于后者.本文工作为直流电场和低频电场的量子传感测量提供了新思路.A Rydberg atom is a special type of atom characterized by a high principal quantum number.Electric field sensors based on Rydberg atoms have received widespread attention due to their high polarizability.However,there is currently little research on the use of Rydberg atoms for direct current(DC)or low-frequency electric fields,mainly due to the shielding effect of atomic vapor cells in low-frequency electric fields,which makes accurate measurement of the electric fields extremely challenging.In this paper,we construct a Rydberg ladder configuration by using probe laser at 852 nm and coupling laser at 510 nm in a room-temperature cesium vapor cell with integrated electrode plates,thereby enabling the realizing of a Floquet-EIT(electromagnetically induced transparency)spectrum dressed by a radio frequency(RF)field in the presence of a DC electric field.We further study the influence of DC electric field on spectral characteristic.Experimentally,it is observed that when only the RF electric field is applied,the EIT spectrum displays solely even-order sidebands.Furthermore,when both the RF field and the DC electric field are simultaneously present,the first-order sideband signal of the Floquet-EIT is observed.As the intensity of the DC electric field increases,the amplitude of the first-order sideband gradually increases.However,increasing the DC electric field to a sufficient magnitude induces sideband interference,which leads the sideband amplitudes to decrease.Furthermore,increasing the RF frequency can alleviate the interference effects induced by the DC electric field on the first-order sideband.Finally,comparing the relative standard deviation of the sideband amplitudes of the Floquet-EIT spectra with the frequency shifts of the DC-Stark spectra under weak DC electric fields,we find that the measurement accuracy of the former is significantly superior to that of the latter.This work makes use of a Cs atomic vapor cell with an integrated electrode to avoid shielding effects.By observing Floquet-EIT spectra,the
关 键 词:里德伯原子 电磁诱导透明 Floquet-电磁诱导透明边带 射频调制
分 类 号:O562[理学—原子与分子物理]
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