Deep level defect passivation for printable mesoporous CsSnI_(3) perovskite solar cells with efficiency above 10%  

作　　者：Haixuan Yu Zhiguo Zhang Huaxia Ban Xiongjie Li Zhirong Liu Junyi Huang Wanpeng Yang Yan Shen Mingkui Wang 

机构地区：[1]Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,Wuhan 430074,Hubei,China [2]Optics Valley Laboratory,Wuhan 430074,Hubei,China

出　　处：《Journal of Energy Chemistry》2025年第3期10-17,共8页能源化学(英文版)

基　　金：supported by the National Key Research and Development Program of China(2022YFB4200305);the National Natural Science Foundation of China(22379049);Hubei Provincial Key Research and Development Program(2023BAB113)。

摘　　要：The lead-free inorganic perovskite CsSnI_(3) is considered as one of the best candidates for emerging photovoltaics.Nevertheless,CsSnI_(3)-based perovskite solar cells experience a significant drop in performance due to the nonradiative recombination facilitated by trapping.Here,we show an electron donor passivation method to regulate deep-level defects for CsSnI_(3) perovskite with electron donor pyrrole.Experimental observations combined with theoretical simulations verify that the saturation of Tin dangling bonds with pyrrole on the CsSnI_(3) surface via a Lewis acid-base addition reaction can significantly reduce the density of deep-level defects.Consequently,the printable mesoporous perovskite solar cells with an FTO/compact-TiO_(2)/mesoporous-TiO_(2)/Al_(2)O_(3)/NiO/carbon framework device structure penetrated with CsSnI_(3) achieve a power conversion efficiency of up to 10.11%.To our knowledge,this represents the highest efficiency reported to date for lead-free pero vs kite-based printable mesoporous solar cells.Furthermore,the unencapsulated devices demonstrated remarkable long-term stability,retaining 92%of their initial efficiency even after 2400 h of aging in a nitrogen atmosphere.

关 键 词：Lead-freeperovskite Dangling bonds DEFECT Recombination Solar cell 

分 类 号：TM914.4[电气工程—电力电子与电力传动]