Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries  

作　　者：Runxian Xing Hongyang Guo Bohan Guo Guohao Yu Ping Zhang Jia'an Zhou An Yang Yu Li Chunfeng Hao Huixin Yue Zhongming Zeng Xinping Zhang Baoshun Zhang 

机构地区：[1]School of Materials Science and Engineering,Nanjing University of Science and Technology,Nanjing 210094,China [2]Nanofabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China [3]School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China

出　　处：《Frontiers of Optoelectronics》2025年第1期63-73,共11页光电子前沿(英文版)

摘　　要：In this paper, we have studied the electrical excitation of plasma-wave in N-polar AlGaN/GaN high electron mobility transistors (HEMT) under asymmetric boundaries leads to terahertz emission. Numerical calculations are conducted through the simultaneous solution of Maxwell’s equations and the self-consistent hydrodynamic model. By employing this method, we solved the plasma-wave model in the channel of an N-polar AlGaN/GaN HEMT. We estimate that, under ideal boundary conditions and with sufficient channel mobility, these devices could generate milliwatts of power. The effects of different GaN channel layer thickness, carrier concentration, gate length and channel carrier velocity on plasma wave oscillation and terahertz radiation in N-polar AlGaN/GaN HEMT are considered. These simulation results based on Dyakonov-Shur instability provide guidance for the future design of high-radiation-power on-chip terahertz sources based on N-polar AlGaN/ GaN HEMTs.

关 键 词：N-polar GaN HEMT Terahertz emission Dyakonov-Shur instability 

分 类 号：TN386[电子电信—物理电子学]