BaTiO_(3)-Bi(Mg_(2/3)(Nb_(1-x)Ta_(x))_(1/3))陶瓷储能性能研究  

Study of the Energy Storage Performance of BaTiO_(3)-Bi(Mg_(2/3)(Nb_(1-x)Ta_(x))_(1/3))Ceramics

作　　者：祝汪阳 陈志武[1] 王歆[1] 卢振亚[1] ZHU Wangyang;CHEN Zhiwu;WANG Xin;LU Zhenya(School of Materials Science and Engineering,South China University of Technology,Guangzhou 510641,China)

机构地区：[1]华南理工大学材料科学与工程学院,广州510641

出　　处：《中国陶瓷》2025年第4期9-17,共9页China Ceramics

基　　金：国家自然科学基金(22272057);广东省重点领域研发计划(2019B010937001);广东省自然科学基金(2019A1515012129)。

摘　　要：对0.875BaTiO_(3)-0.125Bi(Mg_(2/3)Nb_(1/3))陶瓷基体进行Ta^(5+)掺杂,以期提高其击穿场强。采用传统的固相烧结法制备了0.875BaTiO_(3)-0.125Bi(Mg_(2/3)(Nb_(1-x)Ta_(x))_(1/3))系列陶瓷(缩写为0.875BT-0.125BMN_((1-x))T_(x),x=0.0、0.1、0.2、0.3),研究了Ta^(5+)掺杂量对陶瓷的微观结构、介电性能以及储能性能的影响。结果表明:所有组分的陶瓷样品均为单一的钙钛矿结构,掺杂适量的Ta^(5+)能够提高陶瓷材料的晶粒均匀性,增大其击穿场强,显著提高其储能性能。在210 kV/cm电场下,在0.875BT-0.125BMN_(0.9)T_(0.1)陶瓷中获得了最佳的储能性能:W_(rec)=1.797 J/cm^(3),η=70.3%。同时,0.875BT-0.125BMN_(0.9)T_(0.1)陶瓷具有良好的温度、频率以及循环稳定性,可作为低电场高储能密度介质陶瓷电容器的候选材料。In this paper,0.875BaTiO_(3)-0.125Bi(Mg_(2/3)Nb_(1/3))ceramic substrates were doped with Ta^(5+) to enhance its breakdown field strength.A series of 0.875BaTiO_(3)-0.125Bi(Mg_(2/3)(Nb_(1-x)Ta_(x))_(1/3))ceramics(abbreviated as 0.875BT-0.125BMN_(1-x)T_(x),x=0.0,0.1,0.2,0.3)were fabricated using the conventional solid-state sintering method.The influence of Ta5+doping levels on the ceramic structure,dielectric properties,and energy storage performance was investigated.The results indicate that all ceramics were perovskite structure.Doping with an appropriate amount of Ta5+can improve the grain uniformity of ceramics,enhance their breakdown strength,and significantly improve their energy storage performance.The best energy storage performance was obtained in 0.875BT-0.125BMN_(0.9)T_(0.1) ceramic at 210 kV/cm,W_(rec)=1.797 J/cm^(3),η=70.3%.Meanwhile,it has good temperature,frequency,and cycling stability and can be used as a candidate material for low-field,high-energy-density dielectric ceramic capacitors.

关 键 词：钛酸钡 击穿场强 储能密度 储能效率 

分 类 号：TQ174.75[化学工程—陶瓷工业]