利用高熵组分对NaNbO_(3)基介电陶瓷改性的研究  

Study on Modification of NaNbO_(3)-Based Dielectric Ceramics with High Entropy Components

作　　者：周毅[1] 沈亚威 ZHOU Yi;SHEN Yawei(School of Material Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China)

机构地区：[1]太原科技大学材料科学与工程学院,太原030024

出　　处：《中国陶瓷》2025年第4期18-23,共6页China Ceramics

基　　金：国家自然科学基金(51902221)。

摘　　要：利用固态反应烧结法制备了添加不同含量高熵组分的NaNbO_(3)基介电陶瓷材料,所选高熵组分为(Mg_(0.2)Ca_(0.2)Bi_(0.2)Na_(0.2)Ba_(0.2))TiO_(3)。利用XRD开展了物相结构分析,结果表明高熵组分较好地固溶进钙钛矿结构的主晶相NaNbO_(3)中。利用SEM分析陶瓷的微观形貌,表明高熵组分起到了细化晶粒的效果,但是当高熵组分含量超过0.3时晶粒会发生取向生长,形成棒状晶,使结构均匀化程度降低。介电常数与损耗随频率而降低,呈现MaxwellWagner型频谱特征。当高熵组分含量在0.2时,即0.8NaNbO_(3)-0.2 (Mg_(0.2)Ca_(0.2)Bi_(0.2)Na_(0.2)Ba_(0.2))TiO_(3)体系陶瓷中,获得了最高应用电场160 kV/cm、最高饱和极化强度13.3μC/cm^(2)、最低剩余极化强度1.5μC/cm^(2)、最高可释放能量密度0.85 J/cm^(3)、最大能量效率72.6%的最佳性能水平。NaNbO_(3)-based dielectric ceramic materials with different contents of high entropy components were prepared by solid phase reaction sintering method.The selected high entropy component was(Mg_(0.2)Ca_(0.2)Bi_(0.2)Na_(0.2)Ba_(0.2))TiO_(3).XRD was used to analyze the phase structure.The results showed that the high entropy components were well doped in the main perovskite phase NaNbO_(3).The microstructure of the ceramics was analyzed by SEM,showing that the high entropy components effectively refine the grains.However,when the content of the the high entropy components exceeded 0.3,the grains began to grow into rod-shaped ones,and homogenization of the structure was reduced.The dielectric constant and dielectric loss decreased with the increasing frequency,which showed a Maxwell-Wagner type spectral characteristic.When the content of the high entropy components was 0.2,namely the ceramics with a composition of 0.8 NaNbO_(3)-0.2(Mg_(0.2)Ca_(0.2)Bi_(0.2)Na_(0.2)Ba_(0.2))TiO_(3) system,the optimum performance level of the highest applied electric field 160 kV/cm,the highest saturated polarization of 13.3μC/cm^(2),the highest releasable energy density of 0.85 J/cm^(3),the highest energy efficiency of 72.6%,and the lowest remnant polarization of 1.5μC/cm^(2) were obtained.

关 键 词：高熵组分 NaNbO_(3)基陶瓷 介电性能 极化曲线 储能特性 

分 类 号：TQ174.75[化学工程—陶瓷工业]