A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials  

作　　者：Yang Shen Zhejia Zhang Zhujun Yao Mengge Jin Jintian Gao Yuhan Zhao Wenzhong Bao Yabin Sun He Tian 

机构地区：[1]College of Integrated Circuit Science and Engineering,Shanghai Key Laboratory of Multidimensional Information Processing,East China Normal University,Shanghai 200241,People’s Republic of China [2]Institute of Microelectronics and Beijing National Research Center for Information Science and Technology(BNRist),Tsinghua University,Beijing 100084,People’s Republic of China [3]State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,People’s Republic of China [4]Shaoxin Laboratory,Shaoxing 312000,People’s Republic of China

出　　处：《Nano-Micro Letters》2025年第8期294-305,共12页纳微快报(英文版)

基　　金：supported in part by STI 2030-Major Projects under Grant 2022ZD0209200;in part by Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund(L233009);in part by National Natural Science Foundation of China under Grant No.62374099;in part by the Tsinghua-Toyota Joint Research Fund;in part by the Daikin Tsinghua Union Program;in part by Independent Research Program of School of Integrated Circuits,Tsinghua University;This work was also sponsored by CIE-Tencent Robotics X Rhino-Bird Focused Research Program.

摘　　要：Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness.As the stacking process advances,the complexity and cost of nanosheet field-effect transistors(NSFETs)and complementary FET(CFET)continue to rise.The 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems(IRDS)(2022,https://irds.ieee.org/),but not publicly confirmed,indicating that more possibilities still exist.The miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area,power consumption and speed.In this study,a comprehensive framework is built.A set of MoS2 NSFETs were designed and fabricated to extract the key parameters and performances.And then for benchmarking,the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device footprint.Under these conditions,the frequency of ultra-scaled 2D-NSFET is found to improve by 36%at a fixed power consumption.This work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes,i.e.,“2D eq 1 nm”nodes.At the same time,thanks to the lower characteristic length of 2D semiconductors,the miniaturized 2D-NSFET achieves a 28%frequency increase at a fixed power consumption.Further,developing a standard cell library,these devices obtain a similar trend in 16-bit RISC-V CPUs.This work quantifies and highlights the advantages of 2D semiconductors in advanced nodes,offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.

关 键 词：Two-dimensional semiconductors 1 nm technology node Nanosheet field-effect transistors Complementary field-effect transistors Horizontal scaling 

分 类 号：TN386[电子电信—物理电子学]