溅射技术对BT板表面铜膜结构和电性能的影响  

Effect of Sputtering Technique on the Structure and Electrical Properties of Copper Films on the Surface of BT Plates

作　　者：钟利 陈美艳 刘旋 张悦 姚可 ZHONG Li;CHEN Meiyan;LIU Xuan;ZHANG Yue;YAO Ke(Southwest Institute of Physics,Chengdu 610207,China)

机构地区：[1]核工业西南物理研究院,成都610207

出　　处：《表面技术》2025年第8期227-234,共8页Surface Technology

基　　金：中核集团青年英才项目(2023JZYF-01,2022JZYF-04);西物创新行动项目(202301XWCX003)。

摘　　要：目的 为了对比不同技术制备的导电铜膜的性能,分别以直流磁控溅射镀膜技术和高功率脉冲磁控溅射镀膜技术在BT树脂材料表面沉积铜膜。方法 通过检测铜膜的表面微观形貌、化学元素成分、物相结构和孔隙率,对铜膜的微观状态进行对比和分析,并结合铜膜的宏观电性能,对不同镀膜过程中的成膜机理、影响参数及规律展开研究。结果 研究证明,直流磁控溅射铜膜的结晶度更高,但高功率脉冲铜膜的孔隙率更低、晶粒更细小、相对纯度更高,虽然高功率磁控膜具有更好的微观性能,但薄膜的电性能受到晶粒取向、晶界长度等多种因素的影响,高功率磁控溅射膜中的微观优势并未产生明显作用,反而呈现出较直流磁控膜更弱的导电性:经测试,直流磁控铜膜方阻为23mΩ/□,高功率脉冲铜膜的方阻为337mΩ/□。结论采用直流磁控和高功率脉冲磁控技术都能在BT板表面镀覆性能优良的铜膜,从而实现高聚合树脂材料的表面金属化处理,虽然高功率脉冲铜膜具有更好的微观性能,但电性能却远不及直流磁控溅射铜膜,目前在工程实际应用上还不能完全取代直流磁控,仍需针对膜层物相调控、纯度和电性能等方面展开持续深入的研究。High-power pulsed magnetron sputtering coating technology(short in HiPIMS)is an advanced surface modification technology which uses pulsed transient high energy current density of the ion beam to form coatings on the surface of the substrate and controls the rate of temperature rise of the substrate and the microscopic properties of coatings by reducing the average power.Therefore,it has received widespread attention and vigorous development in recent years,but its in-depth comparison with the DC magnetron sputtering technology(short in DCMS)is not sufficient yet.Due to the large differences in physical and chemical properties and poor compatibility between the BT resin material and the copper coating,the interface bonding strength is low between the substrate and the coating,which becomes the source of defects such as microcracks in the coating.The work aims to study the microscopic and macroscopic properties of copper films deposited on BT resin materials by DCMS and HiPIMS respectively.The BT resin was cut into long rectangles of 20 mm×20 mm×1 mm as the base material and ultrasonically cleaned by acetone and anhydrous ethanol and dried.The base material was cleaned and activated through glow sputtering by a low-energy,wide-amplitude and large-current ion beam generated by the filamentless bar-Hall ion source under the vacuum condition of 3×10-3 Pa,and then the copper film was deposited by DCMS and HiPIMS respectively.The current of DCMS was 2 A,the peak current and the average power of HiPIMS were 60 A and 400 W correspondingly,and the thicknesses of both copper films were 1μm.Then,the microstructure of the films was observed by a scanning electron microscope(FEI-NOVA NANO 230 type)and the component was analyzed by the EDS spectrum of each selected point taken by an energy spectrometer(X-MAX5 type).The density of the surface copper film was analyzed by MIP method and the phase composition was investigated by an X-ray diffractometer(EMPYREAN).The bonding strength between the film layer and the base was qual

关 键 词：高功率脉冲磁控镀膜 直流磁控溅射镀膜 BT板 表面金属化 XPS 

分 类 号：TQ316.6[化学工程—高聚物工业]