β-Ga_(2)O_(3)solar-blind ultraviolet light detector with infinite PDCR  

作　　者：Haifeng CHEN Xu ZHAO Xiangtai LIU Qin LU Shaoqing WANG Zhan WANG Yifan JIA Yunhe GUAN Lijun LI Yue HAO 

机构地区：[1]Key Laboratory of Advanced Semiconductor Devices and Materials,School of Electronic Engineering,Xi′an University of Posts and Telecommunications,Xi’an 710121,China [2]State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi’an 710071,China

出　　处：《Science China(Information Sciences)》2025年第4期156-161,共6页中国科学(信息科学)(英文版)

基　　金：supported by Natural Science Basic Research Program of Shaanxi Province of China(Grant No.2023-JC-YB-574);National Natural Science Foundation of China(Grant No.62304178)。

摘　　要：Ultra-high photo-dark current ratio(PDCR)has always been a fascinating indicator for photodetectors.In this paper,the β-Ga_(2)O_(3) solar-blind ultraviolet(UV)light detector with Ni-Ni double Schottky-junctions structure is prepared.The detector has an ultra-high PDCR value exceeding 10^(8)under 254 nm UV light irradiation.The physical mechanism behind this phenomenon is to control the current competition between the two Schottky junctions by setting the drain voltage V_(d) and the source voltage V_(s).When the flowing direction of the current in the device is converted,the current balance point B at which the dark current I_(d(dark))is zero appears during the conversion.Theoretically,at B point,PDCR should be infinite if the photo-current I_(d(photo))is not 0.In the experiment,B point where I_(d(dark))is actually 0 is obtained at V_(d)=10.1 V in the V_(d)-I_(d)curve under V_(s)=20 V and I_(d(photo))at B point is 8.52μA,so the infinite PDCR realizes at B point.This paper provides new insight into Ga_(2)O_(3)solar blind UV detectors.

关 键 词：Ga_(2)O_(3) PDCR Schottky junction solar-blind ultraviolet PHOTODETECTOR 

分 类 号：TN36[电子电信—物理电子学]