High quantum efficiency ultraviolet photodetector based on graphene and truncated silicon nanocones  

作　　者：Feng TIAN Shaoxiong WU Xinyu LIU Baoshi QIAO Dong PU Zongwen LI Cheng CHEN Xiaoxue CAO Srikrishna Chanakya BODEPUDI Muhammad Abid ANWAR Xiaochen WANG Yuda ZHAO Bin YU Tawfique HASAN Huan HU Yang XU 

机构地区：[1]ZJU-UIUC Institute,International Campus,Zhejiang University,Haining 314400,China [2]College of Integrated Circuits,ZJU-Hangzhou Global Scientific and Technological Innovation Center,Zhejiang University,Hangzhou 310027,China [3]Cambridge Graphene Centre,University of Cambridge,Cambridge CB30FA,UK

出　　处：《Science China(Information Sciences)》2025年第4期173-182,共10页中国科学(信息科学)(英文版)

基　　金：supported by National Key R&D Program of China(Grant No.2022YFA1204304);National Natural Science Foundation of China(Grant No.U22A2076);Zhejiang Provincial Young Talents Program;Natural Science Foundation of Zhejiang Province(Grant No.LDT23F04013F04);China Scholarship Council(Grant No.202106320210)。

摘　　要：Ultraviolet photodetectors have a wide range of applications,covering optical analysis,environmental detection,and security solutions.While silicon is extensively used in photodetection,the performance of silicon-based photodetectors in the ultraviolet spectrum is poorer compared to that in the visible range due to limited absorption depth and high reflectivity.To enhance its ultraviolet sensing capabilities,a graphene/truncated silicon cones heterostructure-based photodetector is proposed to simultaneously increase the light-trapping effect and create ultra-shallow Schottky junctions.The design reduces the reflectivity to<12%in the ultraviolet(UV)range,less than 20%of the original value.The graphene/truncated silicon cone photodetectors can achieve responsivity and external quantum efficiency that exceed 0.32 A/W and 113%at a wavelength of 360 nm,respectively.By analyzing the experimental and simulation results,it is confirmed that the elevated performance is a consequence of the combined effects of light-trapping,shallow junction,and impact ionization.Our approach in combining graphene with nanostructured silicon shows promise in future large-scale CMOS integration and high-performance optoelectronic applications.

关 键 词：SILICON GRAPHENE ultraviolet photodetector truncated cones nanostructures 

分 类 号：TN36[电子电信—物理电子学]