Performance limit prediction of atomically thin In_(2)O_(3)transistors  

作　　者：Zongmeng YANG Shibo FANG Linqiang XU Qiuhui LI Jichao DONG Ying LI Baochun WU Mughira GHAFOOR Peiqi YANG Ying GUO Shimin HOU Zhaochu LUO Jing LU 

机构地区：[1]State Key Laboratory for Mesoscopic Physics and School of Physics,Peking University,Beijing 100871,China [2]Collaborative Innovation Center of Quantum Matter,Beijing 100871,China [3]Beijing Key Laboratory for Magnetoelectric Materials and Devices(BKL-MEMD),Peking University,Beijing 100871,China [4]Peking University Yangtze Delta Institute of Optoelectronics,Nantong 226010,China [5]Key Laboratory for the Physics and Chemistry of Nanodevices,Peking University,Beijing 100871,China [6]Beijing Key Laboratory of Quantum Devices,Peking University,Beijing 100871,China [7]State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics,Tsinghua University,Beijing 100871,China [8]Center for Nanoscale Science and Technology,Key Laboratory for the Physics and Chemistry of Nanodevices,Department of Electronics,Peking University,Beijing 100871,China [9]School of Materials Science and Engineering,Xi’an University of Technology,Xi’an 710048,China [10]School of Physics and Telecommunication Engineering,Shaanxi Key Laboratory of Catalysis,Shaanxi University of Technology,Hanzhong 723001,China

出　　处：《Science China(Information Sciences)》2025年第4期395-396,共2页中国科学(信息科学)(英文版)

基　　金：supported by National Natural Science Foundation of China(Grant Nos.12274002,91964101);Ministry of Science and Technology of China(Grant No.2022YFA1203904);Fundamental Research Funds for the Central Universities;High-performance Computing Platform of Peking University,and MatCloud+High Throughput Materials Simulation Engine。

摘　　要：Moore's law requires the downscaling of metal oxide semiconductor field effect transistors(MOSFETs)for future integrated circuits(ICs)development.The performance of Si-based MOSFETs becomes insufficient to meet the standards outlined in the international technology roadmap for semiconductors(ITRS)due to short-channel effects as the channel length shrinks below 10 nm[1].Ultrathin thin In_(2)O_(3)films with atomically smooth surfaces have recently been fabricated using atomic layer deposition(ALD)[2].

关 键 词：atomically smooth surfaces DOWNSCALING atomic layer deposition ald metal oxide semiconductor field effect transistors mosfets moores law atomically thin metal oxide semiconductor field effect transistors O transistors 

分 类 号：TN386[电子电信—物理电子学]