Analysis and fabrication of a SiC super-junction termination structure in a state of charge imbalance  

作　　者：Haobo KANG Fengyu DU Hao YUAN Boyi BAI Yu ZHOU Jingyu LI Chao HAN Xiaoyan TANG Qingwen SONG Yuming ZHANG 

机构地区：[1]Key Lab of Wide Band Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China [2]Xidian-Wuhu Research Institute,Wuhu 241000,China

出　　处：《Science China(Information Sciences)》2025年第4期397-398,共2页中国科学(信息科学)(英文版)

基　　金：supported by National Key R&D Program of China(Grant No.2021YFB3601800);Hefei Comprehensive National ScienceCenter。

摘　　要：A qualified termination should have the same blocking capability as an active region to prevent a super-junction(SJ)device from breaking down prematurely.The 960 V[1]and 1920 V[2]SiC SJ terminations using“trench etchingsidewall ion implantation”are being investigated.However,their termination efficiencies(experimental value/active simulated value)are only 63.2%and 76.8%,respectively,which are much lower than the ideal value.

关 键 词：sj terminations active region super junction qualified termination etchingsidewall ion implantation termination structure charge imbalance FABRICATION 

分 类 号：TN386[电子电信—物理电子学]