Controllable polarity takes a leap forward in emissive perovskite semiconductors  

钙钛矿发光半导体中极性调控的重大进展

作　　者：Xinwen Sun Bing Chen Jianbin Xu Mingzhu Long 孙薪雯;陈冰;许建斌;龙明珠

机构地区：[1]Department of Electronic Engineering,The Chinese University of Hong Kong,Hong Kong 999077,China [2]College of Electronic and Optical Engineering and College of Flexible Electronics(Future Technology),Nanjing University of Posts and Telecommunications,Nanjing 210023,China [3]South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510006,China

出　　处：《Science Bulletin》2025年第6期808-810,共3页科学通报(英文版)

基　　金：supported by the Research Grants Council of Hong Kong(C4001-23GF);Guangdong Basic and Applied Basic Research Foundation(2019B151502028);CUHK Postgraduate Studentship.

摘　　要：Strategic control over semiconductor conductivity and charge type is fundamental to electronic devices,giving rise to a plethora of groundbreaking inventions[1].Doping serves as the cornerstone for modulating the n-type or p-type characteristics of semiconductors and adjusting the carriers concentration[2,3].

关 键 词：doping p type charge type adjusting carriers concentration n type semiconductor conductivity electronic devicesgiving polarity 

分 类 号：TN304[电子电信—物理电子学]